Gabriele Cosmo
150 lines
5.5 KiB
C++
150 lines
5.5 KiB
C++
//
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// ********************************************************************
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// * License and Disclaimer *
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// * *
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// * The Geant4 software is copyright of the Copyright Holders of *
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// * the Geant4 Collaboration. It is provided under the terms and *
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// * conditions of the Geant4 Software License, included in the file *
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// * LICENSE and available at http://cern.ch/geant4/license . These *
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// * include a list of copyright holders. *
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// * *
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// * Neither the authors of this software system, nor their employing *
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// * institutes,nor the agencies providing financial support for this *
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// * work make any representation or warranty, express or implied, *
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// * regarding this software system or assume any liability for its *
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// * use. Please see the license in the file LICENSE and URL above *
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// * for the full disclaimer and the limitation of liability. *
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// * *
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// * This code implementation is the result of the scientific and *
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// * technical work of the GEANT4 collaboration. *
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// * By using, copying, modifying or distributing the software (or *
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// * any work based on the software) you agree to acknowledge its *
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// * use in resulting scientific publications, and indicate your *
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// * acceptance of all terms of the Geant4 Software license. *
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// ********************************************************************
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//
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//
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// G4MicroElecSurface.hh,
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// 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
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// Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
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// D. Lambert is with CEA [a]
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//
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// A part of this work has been funded by the French space agency(CNES[c])
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// [a] CEA, DAM, DIF - 91297 ARPAJON, France
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// [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
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// [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
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//
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// Based on the following publications
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//
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// - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
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// Geant4 physics processes for microdosimetry and secondary electron emission simulation :
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// Extension of MicroElec to very low energies and new materials
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// NIM B, 2020, in review.
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//
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// Based on:
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// -the class G4OpBoundaryProcess.cc for the surface crossing of
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// optical photons.
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//
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//
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//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
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#ifndef G4MicroElecSurface_h
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#define G4MicroElecSurface_h 1
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/////////////
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// Includes
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/////////////
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#include "globals.hh"
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#include "templates.hh"
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#include "geomdefs.hh"
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#include "Randomize.hh"
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#include "G4ProductionCutsTable.hh"
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#include "G4RandomTools.hh"
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#include "G4RandomDirection.hh"
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#include "G4MicroElecMaterialStructure.hh"
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#include "G4Step.hh"
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#include "G4VDiscreteProcess.hh"
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#include "G4DynamicParticle.hh"
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#include "G4Material.hh"
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#include "G4LogicalBorderSurface.hh"
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#include "G4LogicalSkinSurface.hh"
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#include "G4OpticalPhoton.hh"
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#include "G4Electron.hh"
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#include "G4TransportationManager.hh"
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// Class Description:
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// Discrete Process -- reflection/refraction at interfaces for electrons.
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// Class inherits publicly from G4VDiscreteProcess.
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// Class Description - End:
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/////////////////////
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// Class Definition
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/////////////////////
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enum G4MicroElecSurfaceStatus { UndefinedSurf,
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NotAtBoundarySurf,
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SameMaterialSurf,
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StepTooSmallSurf };
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class G4MicroElecSurface : public G4VDiscreteProcess
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{
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public:
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explicit G4MicroElecSurface(const G4String& processName = "MicroElecSurface",
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G4ProcessType type = fElectromagnetic);
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~G4MicroElecSurface() override;
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G4bool IsApplicable(const G4ParticleDefinition& aParticleType) override;
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// Returns true -> 'is applicable' only for an electron.
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void SetFlagFranchissement();
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G4double GetMeanFreePath(const G4Track& ,
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G4double ,
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G4ForceCondition* condition) override;
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// Returns infinity; i. e. the process does not limit the step,
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// but sets the 'Forced' condition for the DoIt to be invoked at
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// every step. However, only at a boundary will any action be
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// taken.
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G4VParticleChange* PostStepDoIt(const G4Track& aTrack,
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const G4Step& aStep) override;
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// This is the method implementing boundary processes.
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void BuildPhysicsTable(const G4ParticleDefinition&) override;
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// Initialisation
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G4MicroElecSurfaceStatus GetStatus() const;
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// Returns the current status.
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G4MicroElecSurface(const G4MicroElecSurface &right) = delete;
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G4MicroElecSurface& operator=(const G4MicroElecSurface &right) = delete;
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void Initialise();
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private:
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// Returns the incident angle of electron
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G4double GetIncidentAngle();
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G4ThreeVector Reflexion(const G4StepPoint* PostStepPoint);
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// private elements
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typedef std::map<G4String, G4double, std::less<G4String> > WorkFunctionTable;
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WorkFunctionTable tableWF; //Table of all materials simulated
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G4double theParticleMomentum;
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G4ThreeVector oldMomentum, previousMomentum;
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G4ThreeVector theGlobalNormal;
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G4ThreeVector theFacetNormal;
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const G4Material* material1;
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const G4Material* material2;
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G4MicroElecSurfaceStatus theStatus;
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G4double kCarTolerance;
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G4double ekint, thetat, thetaft, energyThreshold, crossingProbability;
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G4bool flag_franchissement_surface, flag_reflexion,flag_normal, teleportToDo, teleportDone, isInitialised;
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};
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#endif
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