// // ******************************************************************** // * License and Disclaimer * // * * // * The Geant4 software is copyright of the Copyright Holders of * // * the Geant4 Collaboration. It is provided under the terms and * // * conditions of the Geant4 Software License, included in the file * // * LICENSE and available at http://cern.ch/geant4/license . These * // * include a list of copyright holders. * // * * // * Neither the authors of this software system, nor their employing * // * institutes,nor the agencies providing financial support for this * // * work make any representation or warranty, express or implied, * // * regarding this software system or assume any liability for its * // * use. Please see the license in the file LICENSE and URL above * // * for the full disclaimer and the limitation of liability. * // * * // * This code implementation is the result of the scientific and * // * technical work of the GEANT4 collaboration. * // * By using, copying, modifying or distributing the software (or * // * any work based on the software) you agree to acknowledge its * // * use in resulting scientific publications, and indicate your * // * acceptance of all terms of the Geant4 Software license. * // ******************************************************************** // // // G4MicroElecSurface.hh, // 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b] // Q. Gibaru is with CEA [a], ONERA [b] and CNES [c] // D. Lambert is with CEA [a] // // A part of this work has been funded by the French space agency(CNES[c]) // [a] CEA, DAM, DIF - 91297 ARPAJON, France // [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France // [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France // // Based on the following publications // // - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech, // Geant4 physics processes for microdosimetry and secondary electron emission simulation : // Extension of MicroElec to very low energies and new materials // NIM B, 2020, in review. // // Based on: // -the class G4OpBoundaryProcess.cc for the surface crossing of // optical photons. // // //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo...... #ifndef G4MicroElecSurface_h #define G4MicroElecSurface_h 1 ///////////// // Includes ///////////// #include "globals.hh" #include "templates.hh" #include "geomdefs.hh" #include "Randomize.hh" #include "G4ProductionCutsTable.hh" #include "G4RandomTools.hh" #include "G4RandomDirection.hh" #include "G4MicroElecMaterialStructure.hh" #include "G4Step.hh" #include "G4VDiscreteProcess.hh" #include "G4DynamicParticle.hh" #include "G4Material.hh" #include "G4LogicalBorderSurface.hh" #include "G4LogicalSkinSurface.hh" #include "G4OpticalPhoton.hh" #include "G4Electron.hh" #include "G4TransportationManager.hh" // Class Description: // Discrete Process -- reflection/refraction at interfaces for electrons. // Class inherits publicly from G4VDiscreteProcess. // Class Description - End: ///////////////////// // Class Definition ///////////////////// enum G4MicroElecSurfaceStatus { UndefinedSurf, NotAtBoundarySurf, SameMaterialSurf, StepTooSmallSurf }; class G4MicroElecSurface : public G4VDiscreteProcess { public: explicit G4MicroElecSurface(const G4String& processName = "MicroElecSurface", G4ProcessType type = fElectromagnetic); ~G4MicroElecSurface() override; G4bool IsApplicable(const G4ParticleDefinition& aParticleType) override; // Returns true -> 'is applicable' only for an electron. void SetFlagFranchissement(); G4double GetMeanFreePath(const G4Track& , G4double , G4ForceCondition* condition) override; // Returns infinity; i. e. the process does not limit the step, // but sets the 'Forced' condition for the DoIt to be invoked at // every step. However, only at a boundary will any action be // taken. G4VParticleChange* PostStepDoIt(const G4Track& aTrack, const G4Step& aStep) override; // This is the method implementing boundary processes. void BuildPhysicsTable(const G4ParticleDefinition&) override; // Initialisation G4MicroElecSurfaceStatus GetStatus() const; // Returns the current status. G4MicroElecSurface(const G4MicroElecSurface &right) = delete; G4MicroElecSurface& operator=(const G4MicroElecSurface &right) = delete; void Initialise(); private: // Returns the incident angle of electron G4double GetIncidentAngle(); G4ThreeVector Reflexion(const G4StepPoint* PostStepPoint); // private elements typedef std::map > WorkFunctionTable; WorkFunctionTable tableWF; //Table of all materials simulated G4double theParticleMomentum; G4ThreeVector oldMomentum, previousMomentum; G4ThreeVector theGlobalNormal; G4ThreeVector theFacetNormal; const G4Material* material1; const G4Material* material2; G4MicroElecSurfaceStatus theStatus; G4double kCarTolerance; G4double ekint, thetat, thetaft, energyThreshold, crossingProbability; G4bool flag_franchissement_surface, flag_reflexion,flag_normal, teleportToDo, teleportDone, isInitialised; }; #endif