Gabriele Cosmo
189 lines
7.8 KiB
C++
189 lines
7.8 KiB
C++
//
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// ********************************************************************
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// * License and Disclaimer *
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// * *
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// * The Geant4 software is copyright of the Copyright Holders of *
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// * the Geant4 Collaboration. It is provided under the terms and *
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// * conditions of the Geant4 Software License, included in the file *
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// * LICENSE and available at http://cern.ch/geant4/license . These *
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// * include a list of copyright holders. *
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// * *
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// * Neither the authors of this software system, nor their employing *
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// * institutes,nor the agencies providing financial support for this *
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// * work make any representation or warranty, express or implied, *
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// * regarding this software system or assume any liability for its *
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// * use. Please see the license in the file LICENSE and URL above *
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// * for the full disclaimer and the limitation of liability. *
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// * *
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// * This code implementation is the result of the scientific and *
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// * technical work of the GEANT4 collaboration. *
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// * By using, copying, modifying or distributing the software (or *
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// * any work based on the software) you agree to acknowledge its *
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// * use in resulting scientific publications, and indicate your *
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// * acceptance of all terms of the Geant4 Software license. *
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// ********************************************************************
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//
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//
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// G4MicroElecElasticModel_new.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
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// 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
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// Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
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// M. Raine and D. Lambert are with CEA [a]
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//
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// A part of this work has been funded by the French space agency(CNES[c])
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// [a] CEA, DAM, DIF - 91297 ARPAJON, France
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// [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
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// [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
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//
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// Based on the following publications
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// - A.Valentin, M. Raine,
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// Inelastic cross-sections of low energy electrons in silicon
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// for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
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// NSS Conf. Record 2010, pp. 80-85
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// https://doi.org/10.1109/NSSMIC.2010.5873720
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//
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// - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
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// Geant4 physics processes for microdosimetry simulation:
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// very low energy electromagnetic models for electrons in Silicon,
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// https://doi.org/10.1016/j.nimb.2012.06.007
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// NIM B, vol. 288, pp. 66-73, 2012, part A
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// heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
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// https://doi.org/10.1016/j.nimb.2012.07.028
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//
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// - M. Raine, M. Gaillardin, P. Paillet
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// Geant4 physics processes for silicon microdosimetry simulation:
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// Improvements and extension of the energy-range validity up to 10 GeV/nucleon
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// NIM B, vol. 325, pp. 97-100, 2014
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// https://doi.org/10.1016/j.nimb.2014.01.014
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//
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// - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
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// Electron emission yield for low energy electrons:
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// Monte Carlo simulation and experimental comparison for Al, Ag, and Si
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// Journal of Applied Physics 121 (2017) 215107.
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// https://doi.org/10.1063/1.4984761
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//
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// - P. Caron,
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// Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
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// PHD, 16th October 2019
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//
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// - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
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// Geant4 physics processes for microdosimetry and secondary electron emission simulation :
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// Extension of MicroElec to very low energies and new materials
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// NIM B, 2020, in review.
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//
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//
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//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
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#ifndef G4MICROELECELASTICMODEL_NEW_HH
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#define G4MICROELECELASTICMODEL_NEW_HH 1
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#include <map>
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#include <CLHEP/Units/SystemOfUnits.h>
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#include "G4MicroElecMaterialStructure.hh"
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#include "G4MicroElecCrossSectionDataSet_new.hh"
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#include "G4VEmModel.hh"
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#include "G4Electron.hh"
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#include "G4ParticleChangeForGamma.hh"
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#include "G4LogLogInterpolation.hh"
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#include "G4ProductionCutsTable.hh"
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#include "G4NistManager.hh"
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class G4MicroElecElasticModel_new : public G4VEmModel
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{
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public:
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G4MicroElecElasticModel_new(const G4ParticleDefinition* p = 0,
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const G4String& nam = "MicroElecElasticModel");
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~G4MicroElecElasticModel_new() override;
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void Initialise(const G4ParticleDefinition*, const G4DataVector&) override;
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G4double CrossSectionPerVolume(const G4Material* material,
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const G4ParticleDefinition* p,
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G4double ekin,
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G4double emin,
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G4double emax) override;
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G4double AcousticCrossSectionPerVolume(G4double ekin, G4double kbz, G4double rho,
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G4double cs, G4double Aac, G4double Eac,
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G4double prefactor);
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void SampleSecondaries(std::vector<G4DynamicParticle*>*,
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const G4MaterialCutsCouple*,
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const G4DynamicParticle*,
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G4double tmin,
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G4double maxEnergy) override;
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void SetKillBelowThreshold (G4double threshold);
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G4double GetKillBelowThreshold () { return killBelowEnergy; }
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G4double DamageEnergy(G4double T,G4double A, G4double Z);
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protected:
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G4ParticleChangeForGamma* fParticleChangeForGamma;
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private:
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G4MicroElecElasticModel_new & operator=(const G4MicroElecElasticModel_new &right);
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G4MicroElecElasticModel_new(const G4MicroElecElasticModel_new&);
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// Final state
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G4double Theta(G4ParticleDefinition * aParticleDefinition, G4double k, G4double integrDiff);
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G4double LinLinInterpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2);
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G4double LogLogInterpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2);
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G4double LinLogInterpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2);
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G4double QuadInterpolator(G4double e11, G4double e12, G4double e21, G4double e22,
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G4double x11, G4double x12, G4double x21, G4double x22,
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G4double t1, G4double t2, G4double t, G4double e);
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G4double RandomizeCosTheta(G4double k);
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G4Material* nistSi = nullptr;
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G4double killBelowEnergy;
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G4double lowEnergyLimit;
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G4double lowEnergyLimitOfModel;
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G4double highEnergyLimit;
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G4bool isInitialised;
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G4int verboseLevel;
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// Cross section
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typedef std::map<G4String,G4String,std::less<G4String> > MapFile;
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MapFile tableFile;
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typedef std::map<G4String,G4MicroElecCrossSectionDataSet_new*,std::less<G4String> > MapData;
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//MapData tableData;
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typedef std::map<G4String, MapData*, std::less<G4String> > TCSMap;
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TCSMap tableTCS;
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//Maps for multilayers
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typedef std::map<G4double, std::map<G4double, G4double> > TriDimensionMap;
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typedef std::map<G4String, TriDimensionMap* > ThetaMap;
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ThetaMap thetaDataStorage; //Storage of angles (cumulated)
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typedef std::map<G4String, std::vector<G4double>* > energyMap;
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energyMap eIncidentEnergyStorage;
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typedef std::map<G4double, std::vector<G4double> > VecMap;
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typedef std::map<G4String, VecMap* > ProbaMap;
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ProbaMap eProbaStorage; //Storage of probabilities for cumulated sections
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typedef std::map<G4String, G4MicroElecMaterialStructure*, std::less<G4String> > MapStructure;
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MapStructure tableMaterialsStructures; //Structures of all materials simulated
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G4MicroElecMaterialStructure* currentMaterialStructure = nullptr;
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typedef std::map<G4String, G4double, std::less<G4String> > MapEnergy;
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MapEnergy lowEnergyLimitTable;
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MapEnergy highEnergyLimitTable;
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MapEnergy workFunctionTable;
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G4bool killElectron, acousticModelEnabled;
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G4String currentMaterialName;
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};
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//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
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#endif
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