// // ******************************************************************** // * License and Disclaimer * // * * // * The Geant4 software is copyright of the Copyright Holders of * // * the Geant4 Collaboration. It is provided under the terms and * // * conditions of the Geant4 Software License, included in the file * // * LICENSE and available at http://cern.ch/geant4/license . These * // * include a list of copyright holders. * // * * // * Neither the authors of this software system, nor their employing * // * institutes,nor the agencies providing financial support for this * // * work make any representation or warranty, express or implied, * // * regarding this software system or assume any liability for its * // * use. Please see the license in the file LICENSE and URL above * // * for the full disclaimer and the limitation of liability. * // * * // * This code implementation is the result of the scientific and * // * technical work of the GEANT4 collaboration. * // * By using, copying, modifying or distributing the software (or * // * any work based on the software) you agree to acknowledge its * // * use in resulting scientific publications, and indicate your * // * acceptance of all terms of the Geant4 Software license. * // ******************************************************************** // // // G4MicroElecElasticModel_new.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a] // 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b] // Q. Gibaru is with CEA [a], ONERA [b] and CNES [c] // M. Raine and D. Lambert are with CEA [a] // // A part of this work has been funded by the French space agency(CNES[c]) // [a] CEA, DAM, DIF - 91297 ARPAJON, France // [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France // [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France // // Based on the following publications // - A.Valentin, M. Raine, // Inelastic cross-sections of low energy electrons in silicon // for the simulation of heavy ion tracks with the Geant4-DNA toolkit, // NSS Conf. Record 2010, pp. 80-85 // https://doi.org/10.1109/NSSMIC.2010.5873720 // // - A.Valentin, M. Raine, M.Gaillardin, P.Paillet // Geant4 physics processes for microdosimetry simulation: // very low energy electromagnetic models for electrons in Silicon, // https://doi.org/10.1016/j.nimb.2012.06.007 // NIM B, vol. 288, pp. 66-73, 2012, part A // heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B // https://doi.org/10.1016/j.nimb.2012.07.028 // // - M. Raine, M. Gaillardin, P. Paillet // Geant4 physics processes for silicon microdosimetry simulation: // Improvements and extension of the energy-range validity up to 10 GeV/nucleon // NIM B, vol. 325, pp. 97-100, 2014 // https://doi.org/10.1016/j.nimb.2014.01.014 // // - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine // Electron emission yield for low energy electrons: // Monte Carlo simulation and experimental comparison for Al, Ag, and Si // Journal of Applied Physics 121 (2017) 215107. // https://doi.org/10.1063/1.4984761 // // - P. Caron, // Study of Electron-Induced Single-Event Upset in Integrated Memory Devices // PHD, 16th October 2019 // // - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech, // Geant4 physics processes for microdosimetry and secondary electron emission simulation : // Extension of MicroElec to very low energies and new materials // NIM B, 2020, in review. // // //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo...... #ifndef G4MICROELECELASTICMODEL_NEW_HH #define G4MICROELECELASTICMODEL_NEW_HH 1 #include #include #include "G4MicroElecMaterialStructure.hh" #include "G4MicroElecCrossSectionDataSet_new.hh" #include "G4VEmModel.hh" #include "G4Electron.hh" #include "G4ParticleChangeForGamma.hh" #include "G4LogLogInterpolation.hh" #include "G4ProductionCutsTable.hh" #include "G4NistManager.hh" class G4MicroElecElasticModel_new : public G4VEmModel { public: G4MicroElecElasticModel_new(const G4ParticleDefinition* p = 0, const G4String& nam = "MicroElecElasticModel"); ~G4MicroElecElasticModel_new() override; void Initialise(const G4ParticleDefinition*, const G4DataVector&) override; G4double CrossSectionPerVolume(const G4Material* material, const G4ParticleDefinition* p, G4double ekin, G4double emin, G4double emax) override; G4double AcousticCrossSectionPerVolume(G4double ekin, G4double kbz, G4double rho, G4double cs, G4double Aac, G4double Eac, G4double prefactor); void SampleSecondaries(std::vector*, const G4MaterialCutsCouple*, const G4DynamicParticle*, G4double tmin, G4double maxEnergy) override; void SetKillBelowThreshold (G4double threshold); G4double GetKillBelowThreshold () { return killBelowEnergy; } G4double DamageEnergy(G4double T,G4double A, G4double Z); protected: G4ParticleChangeForGamma* fParticleChangeForGamma; private: G4MicroElecElasticModel_new & operator=(const G4MicroElecElasticModel_new &right); G4MicroElecElasticModel_new(const G4MicroElecElasticModel_new&); // Final state G4double Theta(G4ParticleDefinition * aParticleDefinition, G4double k, G4double integrDiff); G4double LinLinInterpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2); G4double LogLogInterpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2); G4double LinLogInterpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2); G4double QuadInterpolator(G4double e11, G4double e12, G4double e21, G4double e22, G4double x11, G4double x12, G4double x21, G4double x22, G4double t1, G4double t2, G4double t, G4double e); G4double RandomizeCosTheta(G4double k); G4Material* nistSi = nullptr; G4double killBelowEnergy; G4double lowEnergyLimit; G4double lowEnergyLimitOfModel; G4double highEnergyLimit; G4bool isInitialised; G4int verboseLevel; // Cross section typedef std::map > MapFile; MapFile tableFile; typedef std::map > MapData; //MapData tableData; typedef std::map > TCSMap; TCSMap tableTCS; //Maps for multilayers typedef std::map > TriDimensionMap; typedef std::map ThetaMap; ThetaMap thetaDataStorage; //Storage of angles (cumulated) typedef std::map* > energyMap; energyMap eIncidentEnergyStorage; typedef std::map > VecMap; typedef std::map ProbaMap; ProbaMap eProbaStorage; //Storage of probabilities for cumulated sections typedef std::map > MapStructure; MapStructure tableMaterialsStructures; //Structures of all materials simulated G4MicroElecMaterialStructure* currentMaterialStructure = nullptr; typedef std::map > MapEnergy; MapEnergy lowEnergyLimitTable; MapEnergy highEnergyLimitTable; MapEnergy workFunctionTable; G4bool killElectron, acousticModelEnabled; G4String currentMaterialName; }; //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo.... #endif