Import Geant4 10.7.0 source tree

2020-12-04 12:30:43 +01:00
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+//
+// ********************************************************************
+// * License and Disclaimer                                           *
+// *                                                                  *
+// * The  Geant4 software  is  copyright of the Copyright Holders  of *
+// * the Geant4 Collaboration.  It is provided  under  the terms  and *
+// * conditions of the Geant4 Software License,  included in the file *
+// * LICENSE and available at  http://cern.ch/geant4/license .  These *
+// * include a list of copyright holders.                             *
+// *                                                                  *
+// * Neither the authors of this software system, nor their employing *
+// * institutes,nor the agencies providing financial support for this *
+// * work  make  any representation or  warranty, express or implied, *
+// * regarding  this  software system or assume any liability for its *
+// * use.  Please see the license in the file  LICENSE  and URL above *
+// * for the full disclaimer and the limitation of liability.         *
+// *                                                                  *
+// * This  code  implementation is the result of  the  scientific and *
+// * technical work of the GEANT4 collaboration.                      *
+// * By using,  copying,  modifying or  distributing the software (or *
+// * any work based  on the software)  you  agree  to acknowledge its *
+// * use  in  resulting  scientific  publications,  and indicate your *
+// * acceptance of all terms of the Geant4 Software license.          *
+// ********************************************************************
+//
+//
+// G4MicroElecInelastic_new.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
+//                   	    	2020/05/20 P. Caron, C. Inguimbert are with ONERA [b] 
+//				       	   Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
+//				           M. Raine and D. Lambert are with CEA [a]
+//
+// A part of this work has been funded by the French space agency(CNES[c])
+// [a] CEA, DAM, DIF - 91297 ARPAJON, France
+// [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
+// [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
+//
+// Based on the following publications
+//	- A.Valentin, M. Raine, 
+//		Inelastic cross-sections of low energy electrons in silicon
+//	      for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
+//	      NSS Conf. Record 2010, pp. 80-85
+//             https://doi.org/10.1109/NSSMIC.2010.5873720
+//
+//      - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
+//	      Geant4 physics processes for microdosimetry simulation:
+//	      very low energy electromagnetic models for electrons in Silicon,
+//             https://doi.org/10.1016/j.nimb.2012.06.007
+//	      NIM B, vol. 288, pp. 66-73, 2012, part A
+//	      heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
+//             https://doi.org/10.1016/j.nimb.2012.07.028
+//
+//	- M. Raine, M. Gaillardin, P. Paillet
+//	      Geant4 physics processes for silicon microdosimetry simulation: 
+//	      Improvements and extension of the energy-range validity up to 10 GeV/nucleon
+//	      NIM B, vol. 325, pp. 97-100, 2014
+//             https://doi.org/10.1016/j.nimb.2014.01.014
+//
+//      - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
+//	      Electron emission yield for low energy electrons: 
+//	      Monte Carlo simulation and experimental comparison for Al, Ag, and Si
+//	      Journal of Applied Physics 121 (2017) 215107. 
+//               https://doi.org/10.1063/1.4984761
+//
+//      - P. Caron,
+//	      Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
+//	      PHD, 16th October 2019
+//
+//	- Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech, 
+//	      Geant4 physics processes for microdosimetry and secondary electron emission simulation : 
+//	      Extension of MicroElec to very low energies and new materials
+//	      NIM B, 2020, in review.
+//
+//
+//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo...... 
+
+#ifndef G4MICROELEINELASTIC_HH
+#define G4MICROELEINELASTIC_HH 1
+
+#include "G4VEmProcess.hh"
+#include "G4Electron.hh"
+#include "G4Proton.hh"
+#include "G4GenericIon.hh"
+
+//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
+
+class G4MicroElecInelastic_new : public G4VEmProcess
+{
+public: 
+  G4MicroElecInelastic_new(const G4String& processName ="MicroElecIonisation",
+			   G4ProcessType type = fElectromagnetic);
+  ~G4MicroElecInelastic_new() override;
+  
+  G4bool IsApplicable(const G4ParticleDefinition&) override;
+  void PrintInfo() override;
+  
+protected:
+  void InitialiseProcess(const G4ParticleDefinition*) override;
+  
+private:
+  G4bool isInitialised = false;
+};
+
+//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
+  
+#endif