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geant4/source/processes/electromagnetic/lowenergy/include/G4MicroElecInelastic_new.hh
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2020-12-04 12:30:43 +01:00

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//
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// * License and Disclaimer *
// * *
// * The Geant4 software is copyright of the Copyright Holders of *
// * the Geant4 Collaboration. It is provided under the terms and *
// * conditions of the Geant4 Software License, included in the file *
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// * include a list of copyright holders. *
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// * Neither the authors of this software system, nor their employing *
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// * regarding this software system or assume any liability for its *
// * use. Please see the license in the file LICENSE and URL above *
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// * This code implementation is the result of the scientific and *
// * technical work of the GEANT4 collaboration. *
// * By using, copying, modifying or distributing the software (or *
// * any work based on the software) you agree to acknowledge its *
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// * acceptance of all terms of the Geant4 Software license. *
// ********************************************************************
//
//
// G4MicroElecInelastic_new.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
// 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
// Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
// M. Raine and D. Lambert are with CEA [a]
//
// A part of this work has been funded by the French space agency(CNES[c])
// [a] CEA, DAM, DIF - 91297 ARPAJON, France
// [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
// [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
//
// Based on the following publications
// - A.Valentin, M. Raine,
// Inelastic cross-sections of low energy electrons in silicon
// for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
// NSS Conf. Record 2010, pp. 80-85
// https://doi.org/10.1109/NSSMIC.2010.5873720
//
// - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
// Geant4 physics processes for microdosimetry simulation:
// very low energy electromagnetic models for electrons in Silicon,
// https://doi.org/10.1016/j.nimb.2012.06.007
// NIM B, vol. 288, pp. 66-73, 2012, part A
// heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
// https://doi.org/10.1016/j.nimb.2012.07.028
//
// - M. Raine, M. Gaillardin, P. Paillet
// Geant4 physics processes for silicon microdosimetry simulation:
// Improvements and extension of the energy-range validity up to 10 GeV/nucleon
// NIM B, vol. 325, pp. 97-100, 2014
// https://doi.org/10.1016/j.nimb.2014.01.014
//
// - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
// Electron emission yield for low energy electrons:
// Monte Carlo simulation and experimental comparison for Al, Ag, and Si
// Journal of Applied Physics 121 (2017) 215107.
// https://doi.org/10.1063/1.4984761
//
// - P. Caron,
// Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
// PHD, 16th October 2019
//
// - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
// Geant4 physics processes for microdosimetry and secondary electron emission simulation :
// Extension of MicroElec to very low energies and new materials
// NIM B, 2020, in review.
//
//
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#ifndef G4MICROELEINELASTIC_HH
#define G4MICROELEINELASTIC_HH 1
#include "G4VEmProcess.hh"
#include "G4Electron.hh"
#include "G4Proton.hh"
#include "G4GenericIon.hh"
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class G4MicroElecInelastic_new : public G4VEmProcess
{
public:
G4MicroElecInelastic_new(const G4String& processName ="MicroElecIonisation",
G4ProcessType type = fElectromagnetic);
~G4MicroElecInelastic_new() override;
G4bool IsApplicable(const G4ParticleDefinition&) override;
void PrintInfo() override;
protected:
void InitialiseProcess(const G4ParticleDefinition*) override;
private:
G4bool isInitialised = false;
};
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#endif