Import Geant4 10.7.0 source tree
This commit is contained in:
Gabriele Cosmo
@@ -0,0 +1,124 @@
|
||||
//
|
||||
// ********************************************************************
|
||||
// * License and Disclaimer *
|
||||
// * *
|
||||
// * The Geant4 software is copyright of the Copyright Holders of *
|
||||
// * the Geant4 Collaboration. It is provided under the terms and *
|
||||
// * conditions of the Geant4 Software License, included in the file *
|
||||
// * LICENSE and available at http://cern.ch/geant4/license . These *
|
||||
// * include a list of copyright holders. *
|
||||
// * *
|
||||
// * Neither the authors of this software system, nor their employing *
|
||||
// * institutes,nor the agencies providing financial support for this *
|
||||
// * work make any representation or warranty, express or implied, *
|
||||
// * regarding this software system or assume any liability for its *
|
||||
// * use. Please see the license in the file LICENSE and URL above *
|
||||
// * for the full disclaimer and the limitation of liability. *
|
||||
// * *
|
||||
// * This code implementation is the result of the scientific and *
|
||||
// * technical work of the GEANT4 collaboration. *
|
||||
// * By using, copying, modifying or distributing the software (or *
|
||||
// * any work based on the software) you agree to acknowledge its *
|
||||
// * use in resulting scientific publications, and indicate your *
|
||||
// * acceptance of all terms of the Geant4 Software license. *
|
||||
// ********************************************************************
|
||||
//
|
||||
//
|
||||
// G4MicroElecMaterialStructure.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
|
||||
// 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
|
||||
// Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
|
||||
// M. Raine and D. Lambert are with CEA [a]
|
||||
//
|
||||
// A part of this work has been funded by the French space agency(CNES[c])
|
||||
// [a] CEA, DAM, DIF - 91297 ARPAJON, France
|
||||
// [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
|
||||
// [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
|
||||
//
|
||||
// Based on the following publications
|
||||
// - A.Valentin, M. Raine,
|
||||
// Inelastic cross-sections of low energy electrons in silicon
|
||||
// for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
|
||||
// NSS Conf. Record 2010, pp. 80-85
|
||||
// https://doi.org/10.1109/NSSMIC.2010.5873720
|
||||
//
|
||||
// - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
|
||||
// Geant4 physics processes for microdosimetry simulation:
|
||||
// very low energy electromagnetic models for electrons in Silicon,
|
||||
// https://doi.org/10.1016/j.nimb.2012.06.007
|
||||
// NIM B, vol. 288, pp. 66-73, 2012, part A
|
||||
// heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
|
||||
// https://doi.org/10.1016/j.nimb.2012.07.028
|
||||
//
|
||||
// - M. Raine, M. Gaillardin, P. Paillet
|
||||
// Geant4 physics processes for silicon microdosimetry simulation:
|
||||
// Improvements and extension of the energy-range validity up to 10 GeV/nucleon
|
||||
// NIM B, vol. 325, pp. 97-100, 2014
|
||||
// https://doi.org/10.1016/j.nimb.2014.01.014
|
||||
//
|
||||
// - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
|
||||
// Electron emission yield for low energy electrons:
|
||||
// Monte Carlo simulation and experimental comparison for Al, Ag, and Si
|
||||
// Journal of Applied Physics 121 (2017) 215107.
|
||||
// https://doi.org/10.1063/1.4984761
|
||||
//
|
||||
// - P. Caron,
|
||||
// Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
|
||||
// PHD, 16th October 2019
|
||||
//
|
||||
// - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
|
||||
// Geant4 physics processes for microdosimetry and secondary electron emission simulation :
|
||||
// Extension of MicroElec to very low energies and new materials
|
||||
// NIM B, 2020, in review.
|
||||
//
|
||||
//
|
||||
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
|
||||
|
||||
#ifndef G4MICROELECMATERIALSTRUCTURE_HH
|
||||
#define G4MICROELECMATERIALSTRUCTURE_HH 1
|
||||
|
||||
#include "globals.hh"
|
||||
#include "G4Material.hh"
|
||||
#include <vector>
|
||||
|
||||
class G4MicroElecMaterialStructure
|
||||
{
|
||||
public:
|
||||
G4MicroElecMaterialStructure(const G4String& matName = "");
|
||||
virtual ~G4MicroElecMaterialStructure();
|
||||
|
||||
void ReadMaterialFile();
|
||||
G4double Energy(G4int level);
|
||||
G4int NumberOfLevels() { return nLevels; }
|
||||
G4double GetZ(G4int Shell);
|
||||
G4double ConvertUnit(const G4String& unitName);
|
||||
G4double GetEnergyGap() { return energyGap; }
|
||||
G4double GetInitialEnergy() { return initialEnergy; }
|
||||
G4int GetEADL_Enumerator(G4int shell) { return EADL_Enumerator[shell]; };
|
||||
G4double GetWorkFunction() { return workFunction; };
|
||||
G4String GetMaterialName() { return materialName; };
|
||||
G4double GetLimitEnergy(G4int level);
|
||||
G4double GetElasticModelLowLimit() {return limitElastic[0];}
|
||||
G4double GetElasticModelHighLimit() { return limitElastic[1]; }
|
||||
G4double GetInelasticModelLowLimit(G4int pdg);
|
||||
G4double GetInelasticModelHighLimit(G4int pdg);
|
||||
G4bool IsShellWeaklyBound(G4int level);
|
||||
|
||||
private:
|
||||
// private elements
|
||||
G4int nLevels = 3; // Number of levels of material
|
||||
G4bool isCompound = false;
|
||||
G4String materialName = "";
|
||||
std::vector<G4bool> isShellWeaklyBoundVector;
|
||||
std::vector<G4double> energyConstant;
|
||||
std::vector<G4double> LimitEnergy;
|
||||
std::vector<G4int> EADL_Enumerator;
|
||||
G4double workFunction = 0.0;
|
||||
G4double initialEnergy = 0.0;
|
||||
std::vector<G4double> compoundShellZ;
|
||||
G4double Z = 0.0;
|
||||
G4double energyGap = 0.0;
|
||||
G4double limitElastic[2] = { 0,0 };
|
||||
G4double limitInelastic[4] = { 0,0,0,0 };
|
||||
};
|
||||
|
||||
#endif
|
||||
Reference in New Issue
Block a user