Gabriele Cosmo
125 lines
5.6 KiB
C++
125 lines
5.6 KiB
C++
//
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// ********************************************************************
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// * License and Disclaimer *
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// * *
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// * The Geant4 software is copyright of the Copyright Holders of *
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// * the Geant4 Collaboration. It is provided under the terms and *
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// * conditions of the Geant4 Software License, included in the file *
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// * LICENSE and available at http://cern.ch/geant4/license . These *
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// * include a list of copyright holders. *
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// * *
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// * Neither the authors of this software system, nor their employing *
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// * institutes,nor the agencies providing financial support for this *
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// * work make any representation or warranty, express or implied, *
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// * regarding this software system or assume any liability for its *
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// * use. Please see the license in the file LICENSE and URL above *
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// * for the full disclaimer and the limitation of liability. *
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// * *
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// * This code implementation is the result of the scientific and *
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// * technical work of the GEANT4 collaboration. *
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// * By using, copying, modifying or distributing the software (or *
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// * any work based on the software) you agree to acknowledge its *
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// * use in resulting scientific publications, and indicate your *
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// * acceptance of all terms of the Geant4 Software license. *
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// ********************************************************************
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//
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//
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// G4MicroElecMaterialStructure.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
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// 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
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// Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
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// M. Raine and D. Lambert are with CEA [a]
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//
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// A part of this work has been funded by the French space agency(CNES[c])
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// [a] CEA, DAM, DIF - 91297 ARPAJON, France
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// [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
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// [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
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//
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// Based on the following publications
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// - A.Valentin, M. Raine,
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// Inelastic cross-sections of low energy electrons in silicon
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// for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
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// NSS Conf. Record 2010, pp. 80-85
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// https://doi.org/10.1109/NSSMIC.2010.5873720
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//
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// - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
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// Geant4 physics processes for microdosimetry simulation:
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// very low energy electromagnetic models for electrons in Silicon,
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// https://doi.org/10.1016/j.nimb.2012.06.007
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// NIM B, vol. 288, pp. 66-73, 2012, part A
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// heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
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// https://doi.org/10.1016/j.nimb.2012.07.028
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//
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// - M. Raine, M. Gaillardin, P. Paillet
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// Geant4 physics processes for silicon microdosimetry simulation:
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// Improvements and extension of the energy-range validity up to 10 GeV/nucleon
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// NIM B, vol. 325, pp. 97-100, 2014
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// https://doi.org/10.1016/j.nimb.2014.01.014
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//
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// - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
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// Electron emission yield for low energy electrons:
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// Monte Carlo simulation and experimental comparison for Al, Ag, and Si
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// Journal of Applied Physics 121 (2017) 215107.
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// https://doi.org/10.1063/1.4984761
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//
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// - P. Caron,
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// Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
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// PHD, 16th October 2019
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//
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// - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
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// Geant4 physics processes for microdosimetry and secondary electron emission simulation :
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// Extension of MicroElec to very low energies and new materials
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// NIM B, 2020, in review.
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//
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//
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//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
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#ifndef G4MICROELECMATERIALSTRUCTURE_HH
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#define G4MICROELECMATERIALSTRUCTURE_HH 1
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#include "globals.hh"
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#include "G4Material.hh"
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#include <vector>
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class G4MicroElecMaterialStructure
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{
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public:
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G4MicroElecMaterialStructure(const G4String& matName = "");
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virtual ~G4MicroElecMaterialStructure();
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void ReadMaterialFile();
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G4double Energy(G4int level);
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G4int NumberOfLevels() { return nLevels; }
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G4double GetZ(G4int Shell);
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G4double ConvertUnit(const G4String& unitName);
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G4double GetEnergyGap() { return energyGap; }
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G4double GetInitialEnergy() { return initialEnergy; }
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G4int GetEADL_Enumerator(G4int shell) { return EADL_Enumerator[shell]; };
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G4double GetWorkFunction() { return workFunction; };
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G4String GetMaterialName() { return materialName; };
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G4double GetLimitEnergy(G4int level);
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G4double GetElasticModelLowLimit() {return limitElastic[0];}
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G4double GetElasticModelHighLimit() { return limitElastic[1]; }
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G4double GetInelasticModelLowLimit(G4int pdg);
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G4double GetInelasticModelHighLimit(G4int pdg);
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G4bool IsShellWeaklyBound(G4int level);
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private:
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// private elements
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G4int nLevels = 3; // Number of levels of material
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G4bool isCompound = false;
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G4String materialName = "";
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std::vector<G4bool> isShellWeaklyBoundVector;
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std::vector<G4double> energyConstant;
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std::vector<G4double> LimitEnergy;
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std::vector<G4int> EADL_Enumerator;
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G4double workFunction = 0.0;
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G4double initialEnergy = 0.0;
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std::vector<G4double> compoundShellZ;
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G4double Z = 0.0;
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G4double energyGap = 0.0;
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G4double limitElastic[2] = { 0,0 };
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G4double limitInelastic[4] = { 0,0,0,0 };
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};
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#endif
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