Gabriele Cosmo
107 lines
3.4 KiB
Plaintext
107 lines
3.4 KiB
Plaintext
-------------------------------------------------------------------
|
|
$Id: README,v 1.1 2012-09-21 mraine Exp $
|
|
-------------------------------------------------------------------
|
|
|
|
=========================================================
|
|
Geant4 - Microelectronics example
|
|
=========================================================
|
|
|
|
README file
|
|
----------------------
|
|
|
|
CORRESPONDING AUTHOR
|
|
|
|
M. Raine
|
|
CEA, DAM, DIF, F-91297 Arpajon, France
|
|
* e-mail:melanie.raine@cea.fr
|
|
|
|
---->0. INTRODUCTION.
|
|
|
|
The microelectronics example simulates the track of a 5 MeV proton in silicon.
|
|
Geant4 standard EM models are used in the World volume while Geant4-MicroElec models
|
|
are used in a Target volume, declared as a Region.
|
|
|
|
---->1. GEOMETRY SET-UP.
|
|
|
|
The geometry is a 1 um side cube (World) made of silicon containing a smaller cubic Target volume of silicon.
|
|
|
|
---->2. SET-UP
|
|
|
|
Make sure G4LEDATA points to the low energy electromagnetic libraries.
|
|
|
|
The variable G4ANALYSIS_USE must be set to 1.
|
|
|
|
The code should be compiled with cmake:
|
|
$ cd $HOME
|
|
$ mkdir microelectronics-build
|
|
$ cd $HOME/microelectronics-build
|
|
$ cmake -DGeant4_DIR=/your_path/geant4-install/lib64/Geant4-9.5.0 $HOME/microelectronics
|
|
$ make
|
|
|
|
It works in MT mode.
|
|
|
|
---->3. HOW TO RUN THE EXAMPLE
|
|
|
|
In interactive mode, run:
|
|
|
|
./Microelectronics
|
|
|
|
The macro microelectronics.mac is executed by default.
|
|
|
|
To get visualization, make sure to uncomment the #/control/execute vis.mac
|
|
line in the macro.
|
|
|
|
---->4. PHYSICS
|
|
|
|
This example shows:
|
|
- how to use the Geant4-MicroElec processes,
|
|
- how to affect them a name
|
|
- how to combine them with Standard EM Physics.
|
|
|
|
A simple electron capture process is also provided in order to kill electrons
|
|
below a chosen energy threshold, set in the Physics list.
|
|
|
|
Look at the PhyscisList.cc file.
|
|
|
|
---->5. SIMULATION OUTPUT AND RESULT ANALYZIS
|
|
|
|
The output results consists in a microelectronics.root file, containing for each simulation step:
|
|
- the type of particle for the current step
|
|
- the type of process for the current step
|
|
- the track position of the current step (in nanometers)
|
|
- the energy deposit along the current step (in eV)
|
|
- the step length (in nm)
|
|
- the total enery loss along the current step (in eV)
|
|
|
|
This file can be easily analyzed using for example the provided ROOT macro
|
|
file plot.C; to do so :
|
|
* be sure to have ROOT installed on your machine
|
|
* be sure to be in the microelectronics directory
|
|
* launch ROOT by typing root
|
|
* under your ROOT session, type in : .X plot.C to execute the macro file
|
|
* alternatively you can type directly under your session : root plot.C
|
|
|
|
The naming scheme on the displayed ROOT plots is as follows (see SteppingAction.cc):
|
|
|
|
-particles:
|
|
e- : 1
|
|
proton : 2
|
|
ion : 3
|
|
|
|
-processes:
|
|
e-_G4MicroElecElastic 11
|
|
e-_G4MicroElecInelastic 12
|
|
eCapture 13
|
|
|
|
p_G4MicroElecInelastic 14
|
|
|
|
ion_G4MicroElecInelastic 15
|
|
|
|
hIoni 16
|
|
eIoni 17
|
|
|
|
---------------------------------------------------------------------------
|
|
|
|
Should you have any enquiry, please do not hesitate to contact:
|
|
melanie.raine@cea.fr
|