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geant4/source/processes/electromagnetic/lowenergy/include/G4MicroElecInelasticModel_new.hh
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Gabriele Cosmo de4f28d823 Import Geant4 11.0.1 source tree
2022-03-23 08:25:50 +01:00

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//
// ********************************************************************
// * License and Disclaimer *
// * *
// * The Geant4 software is copyright of the Copyright Holders of *
// * the Geant4 Collaboration. It is provided under the terms and *
// * conditions of the Geant4 Software License, included in the file *
// * LICENSE and available at http://cern.ch/geant4/license . These *
// * include a list of copyright holders. *
// * *
// * Neither the authors of this software system, nor their employing *
// * institutes,nor the agencies providing financial support for this *
// * work make any representation or warranty, express or implied, *
// * regarding this software system or assume any liability for its *
// * use. Please see the license in the file LICENSE and URL above *
// * for the full disclaimer and the limitation of liability. *
// * *
// * This code implementation is the result of the scientific and *
// * technical work of the GEANT4 collaboration. *
// * By using, copying, modifying or distributing the software (or *
// * any work based on the software) you agree to acknowledge its *
// * use in resulting scientific publications, and indicate your *
// * acceptance of all terms of the Geant4 Software license. *
// ********************************************************************
//
//
// G4MicroElecInelasticModel_new.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
// 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
// Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
// M. Raine and D. Lambert are with CEA [a]
//
// A part of this work has been funded by the French space agency(CNES[c])
// [a] CEA, DAM, DIF - 91297 ARPAJON, France
// [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
// [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
//
// Based on the following publications
// - A.Valentin, M. Raine,
// Inelastic cross-sections of low energy electrons in silicon
// for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
// NSS Conf. Record 2010, pp. 80-85
// https://doi.org/10.1109/NSSMIC.2010.5873720
//
// - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
// Geant4 physics processes for microdosimetry simulation:
// very low energy electromagnetic models for electrons in Silicon,
// https://doi.org/10.1016/j.nimb.2012.06.007
// NIM B, vol. 288, pp. 66-73, 2012, part A
// heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
// https://doi.org/10.1016/j.nimb.2012.07.028
//
// - M. Raine, M. Gaillardin, P. Paillet
// Geant4 physics processes for silicon microdosimetry simulation:
// Improvements and extension of the energy-range validity up to 10 GeV/nucleon
// NIM B, vol. 325, pp. 97-100, 2014
// https://doi.org/10.1016/j.nimb.2014.01.014
//
// - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
// Electron emission yield for low energy electrons:
// Monte Carlo simulation and experimental comparison for Al, Ag, and Si
// Journal of Applied Physics 121 (2017) 215107.
// https://doi.org/10.1063/1.4984761
//
// - P. Caron,
// Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
// PHD, 16th October 2019
//
// - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
// Geant4 physics processes for microdosimetry and secondary electron emission simulation :
// Extension of MicroElec to very low energies and new materials
// NIM B, 2020, in review.
//
//
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
#ifndef G4MICROELECINELASTICMODEL_NEW_HH
#define G4MICROELECINELASTICMODEL_NEW_HH 1
#include "globals.hh"
#include "G4VEmModel.hh"
#include "G4ParticleChangeForGamma.hh"
#include "G4ProductionCutsTable.hh"
#include "G4MicroElecMaterialStructure.hh"
#include "G4MicroElecCrossSectionDataSet_new.hh"
#include "G4Electron.hh"
#include "G4Proton.hh"
#include "G4GenericIon.hh"
#include "G4ParticleDefinition.hh"
#include "G4LogLogInterpolation.hh"
#include "G4VAtomDeexcitation.hh"
#include "G4NistManager.hh"
class G4MicroElecInelasticModel_new : public G4VEmModel
{
public:
explicit G4MicroElecInelasticModel_new(const G4ParticleDefinition* p = nullptr,
const G4String& nam = "MicroElecInelasticModel");
~G4MicroElecInelasticModel_new() override;
void Initialise(const G4ParticleDefinition*, const G4DataVector&) override;
G4double CrossSectionPerVolume(const G4Material* material,
const G4ParticleDefinition* p,
G4double ekin,
G4double emin,
G4double emax) override;
void SampleSecondaries(std::vector<G4DynamicParticle*>*,
const G4MaterialCutsCouple*,
const G4DynamicParticle*,
G4double tmin,
G4double maxEnergy) override;
G4double DifferentialCrossSection(const G4ParticleDefinition * aParticleDefinition,
G4double k, G4double energyTransfer, G4int shell);
G4double ComputeRelativistVelocity(G4double E, G4double mass);
G4double ComputeElasticQmax(G4double T1i, G4double T2i, G4double m1, G4double m2);
G4double BKZ(G4double Ep, G4double mp, G4int Zp, G4double EF);
// compute the effective charge according Brandt et Kitagawa theory
G4double stepFunc(G4double x);
G4double vrkreussler(G4double v, G4double vF);
G4MicroElecInelasticModel_new & operator=(const G4MicroElecInelasticModel_new &right) = delete;
G4MicroElecInelasticModel_new(const G4MicroElecInelasticModel_new&) = delete;
protected:
G4ParticleChangeForGamma* fParticleChangeForGamma = nullptr;
private:
//
// private methods
//
G4int RandomSelect(G4double energy,const G4String& particle, G4double originalMass, G4int originalZ );
G4double RandomizeCreatedElectronEnergy(G4double secondaryKinetic);
G4double RandomizeEjectedElectronEnergy(const G4ParticleDefinition * aParticleDefinition,
G4double incomingParticleEnergy, G4int shell,
G4double originalMass, G4int originalZ) ;
G4double RandomizeEjectedElectronEnergyFromCumulatedDcs(const G4ParticleDefinition*,
G4double k, G4int shell);
G4double TransferedEnergy(const G4ParticleDefinition*, G4double k,
G4int ionizationLevelIndex, G4double random);
G4double Interpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2);
G4double QuadInterpolator( G4double e11, G4double e12, G4double e21, G4double e22,
G4double x11, G4double x12, G4double x21, G4double x22,
G4double t1, G4double t2, G4double t, G4double e);
//
// private elements
//
//deexcitation manager to produce fluo photns and e-
G4VAtomDeexcitation* fAtomDeexcitation = nullptr;
G4Material* nistSi = nullptr;
G4MicroElecMaterialStructure* currentMaterialStructure = nullptr;
typedef std::map<G4String,G4String,std::less<G4String> > MapFile;
typedef std::map<G4String,G4MicroElecCrossSectionDataSet_new*,std::less<G4String> > MapData;
typedef std::map<G4double, std::map<G4double, G4double> > TriDimensionMap;
typedef std::map<G4double, std::vector<G4double> > VecMap;
//Tables for multilayers
typedef std::map<G4String, MapData*, std::less<G4String> > TCSMap;
TCSMap tableTCS; //TCS tables by particle
typedef std::map<G4String, std::vector<TriDimensionMap>* > dataDiffCSMap;
dataDiffCSMap eDiffDatatable, pDiffDatatable; //Transfer probabilities (for slower code)
dataDiffCSMap eNrjTransStorage, pNrjTransStorage; //Transfered energies and corresponding probability (faster code)
typedef std::map<G4String, std::vector<VecMap>* > dataProbaShellMap;
dataProbaShellMap eProbaShellStorage, pProbaShellStorage; //Cumulated Transfer probabilities (faster code)
typedef std::map<G4String, std::vector<G4double>* > incidentEnergyMap;
incidentEnergyMap eIncidentEnergyStorage, pIncidentEnergyStorage; //Incident energies for interpolation (faster code)
typedef std::map<G4String, VecMap* > TranfEnergyMap;
TranfEnergyMap eVecmStorage, pVecmStorage; //Transfered energy for interpolation (slower code)
typedef std::map<G4String, G4MicroElecMaterialStructure*, std::less<G4String> > MapStructure;
MapStructure tableMaterialsStructures; //Structures of all materials simulated
G4String currentMaterial = "";
std::map<G4String,G4double,std::less<G4String> > lowEnergyLimit;
std::map<G4String,G4double,std::less<G4String> > highEnergyLimit;
G4int verboseLevel;
G4bool isInitialised ;
G4bool fasterCode;
G4bool SEFromFermiLevel;
};
#endif
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