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Geant4 - Microelectronics example
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README file
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CORRESPONDING AUTHORS
M. Raine*, D. Lambert*, C. Inguimbert', Q. Gibaru'
* CEA, DAM, DIF, F-91297 Arpajon, France
' ONERA, 2 avenue Edouard Belin - BP 74025 - 31055 TOULOUSE, France
email: melanie.raine@cea.fr damien.lambert@cea.fr
christophe.Inguimbert@onera.fr Quentin.Gibaru@onera.fr
---->0. INTRODUCTION.
The microelectronics example simulates the track of a 5 MeV proton in silicon.
Geant4 standard EM models are used in the World volume while Geant4-MicroElec models
are used in a Target volume, declared as a Region.
---->1. GEOMETRY SET-UP.
By default, the geometry is a 2 um side cube (World) made of silicon containing
a smaller cubic Target volume of silicon (1 um3).
The target material can be modified and simulated with G4MicroElecPhysics processes.
---->2. SET-UP
Make sure that the G4EMLOW database version is correct (> or = 7.16)
The variable G4ANALYSIS_USE must be set to 1.
The code should be compiled with cmake:
$ mkdir microelectronics-build
$ cd microelectronics-build
$ cmake -DGeant4_DIR=/your_path/geant4-install/ $PATHTOMICROELECEXAMPLE/microelectronics
$ make
It works in MT mode (but in this example today MT=1 due to memory consumption of new Microelec models).
---->3. HOW TO RUN THE EXAMPLE
In interactive mode, run:
./microelectronics
The macro microelectronics.mac is executed by default.
To get visualization, make sure to uncomment the #/control/execute vis.mac
line in the macro.
By default, the new MicroElec models are used.
You can used the Silicon MicroElec models, with the "-onlySi" option:
./microelectronics -onlySi
or
./microelectronics microelectronics.mac -onlySi
You can change the type of the target material
(G4_Ag G4_Al G4_C G4_Cu G4_Ge G4_KAPTON G4_Ni G4_Si G4_SILICON_DIOXIDE G4_Ti G4_W),
if you uncomment one line (/microelectronics/det/setMat) into the .mac file.
---->4. PHYSICS
This example shows:
- how to use the G4MicroElecPhysics and G4MicroElecSiPhysics processes,
- how to affect them a name
- how to combine them with Standard EM Physics.
A simple electron capture process is also provided in order to kill electrons
below a chosen energy threshold, set in the Physics list.
Look at the G4MicroElecSiPhysics.cc (previous silicon MicroElec models)
and G4MicroElecPhysics.cc (new MicroElec models) files.
---->5. SIMULATION OUTPUT AND RESULT ANALYZIS
The output results consists in a microelectronics.root file, containing for each simulation step:
- the type of particle for the current step
- the type of process for the current step
- the track position of the current step (in nanometers)
- the energy deposit along the current step (in eV)
- the step length (in nm)
- the total enery loss along the current step (in eV)
This file can be easily analyzed using for example the provided ROOT macro
file plot.C; to do so :
* be sure to have ROOT installed on your machine
* be sure to be in the microelectronics directory
* launch ROOT by typing root
* under your ROOT session, type in : .X plot.C to execute the macro file
* alternatively you can type directly under your session : root plot.C
The naming scheme on the displayed ROOT plots is as follows (see SteppingAction.cc):
-particles:
e- : 1
proton : 2
ion : 3
-processes:
e-_G4MicroElecElastic 11
e-_G4MicroElecInelastic 12
eCapture 13
p_G4MicroElecInelastic 14
ion_G4MicroElecInelastic 15
hIoni 16
eIoni 17
G4MicroElecPhysics parameters:
e-_G4LOPhononScattering 19
e-_G4MicroElecSurface 20
alpha_G4Dielectrics 21
ion_G4Dielectrics 22
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Should you have any enquiry, please do not hesitate to contact one the corresponding authors.
Gabriele Cosmo