106 lines
3.3 KiB
Plaintext
106 lines
3.3 KiB
Plaintext
-------------------------------------------------------------------
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-------------------------------------------------------------------
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=========================================================
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Geant4 - Microelectronics example
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=========================================================
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README file
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----------------------
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CORRESPONDING AUTHOR
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M. Raine
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CEA, DAM, DIF, F-91297 Arpajon, France
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* e-mail:melanie.raine@cea.fr
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---->0. INTRODUCTION.
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The microelectronics example simulates the track of a 5 MeV proton in silicon.
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Geant4 standard EM models are used in the World volume while Geant4-MicroElec models
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are used in a Target volume, declared as a Region.
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---->1. GEOMETRY SET-UP.
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The geometry is a 1 um side cube (World) made of silicon containing a smaller cubic Target volume of silicon.
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---->2. SET-UP
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Make sure G4LEDATA points to the low energy electromagnetic libraries.
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The variable G4ANALYSIS_USE must be set to 1.
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The code should be compiled with cmake:
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$ cd $HOME
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$ mkdir microelectronics-build
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$ cd $HOME/microelectronics-build
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$ cmake -DGeant4_DIR=/your_path/geant4-install/lib64/Geant4-9.5.0 $HOME/microelectronics
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$ make
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It works in MT mode.
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---->3. HOW TO RUN THE EXAMPLE
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In interactive mode, run:
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./Microelectronics
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The macro microelectronics.mac is executed by default.
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To get visualization, make sure to uncomment the #/control/execute vis.mac
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line in the macro.
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---->4. PHYSICS
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This example shows:
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- how to use the Geant4-MicroElec processes,
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- how to affect them a name
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- how to combine them with Standard EM Physics.
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A simple electron capture process is also provided in order to kill electrons
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below a chosen energy threshold, set in the Physics list.
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Look at the PhyscisList.cc file.
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---->5. SIMULATION OUTPUT AND RESULT ANALYZIS
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The output results consists in a microelectronics.root file, containing for each simulation step:
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- the type of particle for the current step
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- the type of process for the current step
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- the track position of the current step (in nanometers)
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- the energy deposit along the current step (in eV)
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- the step length (in nm)
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- the total enery loss along the current step (in eV)
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This file can be easily analyzed using for example the provided ROOT macro
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file plot.C; to do so :
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* be sure to have ROOT installed on your machine
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* be sure to be in the microelectronics directory
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* launch ROOT by typing root
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* under your ROOT session, type in : .X plot.C to execute the macro file
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* alternatively you can type directly under your session : root plot.C
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The naming scheme on the displayed ROOT plots is as follows (see SteppingAction.cc):
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-particles:
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e- : 1
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proton : 2
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ion : 3
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-processes:
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e-_G4MicroElecElastic 11
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e-_G4MicroElecInelastic 12
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eCapture 13
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p_G4MicroElecInelastic 14
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ion_G4MicroElecInelastic 15
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hIoni 16
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eIoni 17
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---------------------------------------------------------------------------
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Should you have any enquiry, please do not hesitate to contact:
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melanie.raine@cea.fr
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