Gabriele Cosmo
128 lines
4.4 KiB
Plaintext
128 lines
4.4 KiB
Plaintext
-------------------------------------------------------------------
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-------------------------------------------------------------------
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=========================================================
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Geant4 - Microelectronics example
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=========================================================
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README file
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----------------------
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CORRESPONDING AUTHORS
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M. Raine*, D. Lambert*, C. Inguimbert', Q. Gibaru'
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* CEA, DAM, DIF, F-91297 Arpajon, France
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' ONERA, 2 avenue Edouard Belin - BP 74025 - 31055 TOULOUSE, France
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email: melanie.raine@cea.fr damien.lambert@cea.fr
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christophe.Inguimbert@onera.fr Quentin.Gibaru@onera.fr
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---->0. INTRODUCTION.
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The microelectronics example simulates the track of a 5 MeV proton in silicon.
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Geant4 standard EM models are used in the World volume while Geant4-MicroElec models
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are used in a Target volume, declared as a Region.
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---->1. GEOMETRY SET-UP.
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By default, the geometry is a 2 um side cube (World) made of silicon containing
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a smaller cubic Target volume of silicon (1 um3).
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The target material can be modified and simulated with G4MicroElecPhysics processes.
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---->2. SET-UP
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Make sure that the G4EMLOW database version is correct (> or = 7.16)
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The variable G4ANALYSIS_USE must be set to 1.
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The code should be compiled with cmake:
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$ mkdir microelectronics-build
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$ cd microelectronics-build
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$ cmake -DGeant4_DIR=/your_path/geant4-install/ $PATHTOMICROELECEXAMPLE/microelectronics
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$ make
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It works in MT mode (but in this example today MT=1 due to memory consumption of new Microelec models).
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---->3. HOW TO RUN THE EXAMPLE
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In interactive mode, run:
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./microelectronics
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The macro microelectronics.mac is executed by default.
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To get visualization, make sure to uncomment the #/control/execute vis.mac
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line in the macro.
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By default, the new MicroElec models are used.
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You can used the Silicon MicroElec models, with the "-onlySi" option:
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./microelectronics -onlySi
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or
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./microelectronics microelectronics.mac -onlySi
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You can change the type of the target material
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(G4_Ag G4_Al G4_C G4_Cu G4_Ge G4_KAPTON G4_Ni G4_Si G4_SILICON_DIOXIDE G4_Ti G4_W),
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if you uncomment one line (/microelectronics/det/setMat) into the .mac file.
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---->4. PHYSICS
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This example shows:
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- how to use the G4MicroElecPhysics and G4MicroElecSiPhysics processes,
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- how to affect them a name
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- how to combine them with Standard EM Physics.
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A simple electron capture process is also provided in order to kill electrons
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below a chosen energy threshold, set in the Physics list.
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Look at the G4MicroElecSiPhysics.cc (previous silicon MicroElec models)
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and G4MicroElecPhysics.cc (new MicroElec models) files.
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---->5. SIMULATION OUTPUT AND RESULT ANALYZIS
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The output results consists in a microelectronics.root file, containing for each simulation step:
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- the type of particle for the current step
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- the type of process for the current step
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- the track position of the current step (in nanometers)
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- the energy deposit along the current step (in eV)
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- the step length (in nm)
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- the total enery loss along the current step (in eV)
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This file can be easily analyzed using for example the provided ROOT macro
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file plot.C; to do so :
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* be sure to have ROOT installed on your machine
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* be sure to be in the microelectronics directory
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* launch ROOT by typing root
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* under your ROOT session, type in : .X plot.C to execute the macro file
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* alternatively you can type directly under your session : root plot.C
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The naming scheme on the displayed ROOT plots is as follows (see SteppingAction.cc):
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-particles:
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e- : 1
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proton : 2
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ion : 3
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-processes:
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e-_G4MicroElecElastic 11
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e-_G4MicroElecInelastic 12
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eCapture 13
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p_G4MicroElecInelastic 14
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ion_G4MicroElecInelastic 15
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hIoni 16
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eIoni 17
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G4MicroElecPhysics parameters:
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e-_G4LOPhononScattering 19
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e-_G4MicroElecSurface 20
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alpha_G4Dielectrics 21
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ion_G4Dielectrics 22
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---------------------------------------------------------------------------
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Should you have any enquiry, please do not hesitate to contact one the corresponding authors.
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