Gabriele Cosmo
322 lines
12 KiB
C++
322 lines
12 KiB
C++
//
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// ********************************************************************
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// * License and Disclaimer *
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// * *
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// * The Geant4 software is copyright of the Copyright Holders of *
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// * the Geant4 Collaboration. It is provided under the terms and *
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// * conditions of the Geant4 Software License, included in the file *
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// * LICENSE and available at http://cern.ch/geant4/license . These *
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// * include a list of copyright holders. *
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// * *
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// * Neither the authors of this software system, nor their employing *
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// * institutes,nor the agencies providing financial support for this *
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// * work make any representation or warranty, express or implied, *
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// * regarding this software system or assume any liability for its *
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// * use. Please see the license in the file LICENSE and URL above *
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// * for the full disclaimer and the limitation of liability. *
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// * *
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// * This code implementation is the result of the scientific and *
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// * technical work of the GEANT4 collaboration. *
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// * By using, copying, modifying or distributing the software (or *
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// * any work based on the software) you agree to acknowledge its *
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// * use in resulting scientific publications, and indicate your *
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// * acceptance of all terms of the Geant4 Software license. *
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// ********************************************************************
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//
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//
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// G4MicroElecCapture.cc,
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// 2011/08/29 A.Valentin, M. Raine are with CEA [a]
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// 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
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// Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
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// M. Raine and D. Lambert are with CEA [a]
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//
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// A part of this work has been funded by the French space agency(CNES[c])
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// [a] CEA, DAM, DIF - 91297 ARPAJON, France
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// [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France
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// [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
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//
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// Based on the following publications
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// - A.Valentin, M. Raine,
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// Inelastic cross-sections of low energy electrons in silicon
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// for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
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// NSS Conf. Record 2010, pp. 80-85
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// https://doi.org/10.1109/NSSMIC.2010.5873720
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//
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// - A.Valentin, M. Raine, M.Gaillardin, P.Paillet
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// Geant4 physics processes for microdosimetry simulation:
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// very low energy electromagnetic models for electrons in Silicon,
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// https://doi.org/10.1016/j.nimb.2012.06.007
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// NIM B, vol. 288, pp. 66-73, 2012, part A
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// heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B
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// https://doi.org/10.1016/j.nimb.2012.07.028
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//
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// - M. Raine, M. Gaillardin, P. Paillet
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// Geant4 physics processes for silicon microdosimetry simulation:
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// Improvements and extension of the energy-range validity up to 10 GeV/nucleon
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// NIM B, vol. 325, pp. 97-100, 2014
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// https://doi.org/10.1016/j.nimb.2014.01.014
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//
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// - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
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// Electron emission yield for low energy electrons:
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// Monte Carlo simulation and experimental comparison for Al, Ag, and Si
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// Journal of Applied Physics 121 (2017) 215107.
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// https://doi.org/10.1063/1.4984761
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//
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// - P. Caron,
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// Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
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// PHD, 16th October 2019
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//
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// - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
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// Geant4 physics processes for microdosimetry and secondary electron emission simulation :
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// Extension of MicroElec to very low energies and new materials
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// NIM B, 2020, in review.
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//
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//----------------------------------------------------------------------------
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//
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// ClassName: G4MicroElecCapture derivated from G4ElectronCapture (V Ivanchenko)
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//
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// Description: The process to kill particles to save CPU
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//
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// Author: C. Inguimbert 31 january 2022 derivated from G4ElectronCapture (V.Ivanchenko 31 August 2010)
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//
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//----------------------------------------------------------------------------
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//
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//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
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#include "G4MicroElecCapture.hh"
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#include "G4SystemOfUnits.hh"
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#include "G4ParticleDefinition.hh"
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#include "G4Step.hh"
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#include "G4PhysicalConstants.hh"
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#include "G4Track.hh"
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#include "G4Region.hh"
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#include "G4RegionStore.hh"
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#include "G4Electron.hh"
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#include "G4Pow.hh"
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//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
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G4MicroElecCapture::G4MicroElecCapture(const G4String& regName, G4double ekinlim)
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: G4VDiscreteProcess("MicroElecCapture", fElectromagnetic), kinEnergyThreshold(ekinlim),
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regionName(regName), region(0)
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{
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if(regName == "" || regName == "world")
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{
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regionName = "DefaultRegionForTheWorld";
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}
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isInitialised = false;
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pParticleChange = &fParticleChange;
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}
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//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
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G4MicroElecCapture::~G4MicroElecCapture()
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{
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for (auto pos = tableWF.cbegin(); pos != tableWF.cend(); ++pos)
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{
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G4MicroElecMaterialStructure* table = pos->second;
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delete table;
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}
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}
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//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
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void G4MicroElecCapture::SetKinEnergyLimit(G4double val)
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{
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kinEnergyThreshold = val;
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}
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//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
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void G4MicroElecCapture::BuildPhysicsTable(const G4ParticleDefinition&)
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{
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region = (G4RegionStore::GetInstance())->GetRegion(regionName);
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// if(region && verboseLevel > 0) {
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G4cout << "### G4MicroElecCapture: Tracking cut E(MeV) = "
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<< kinEnergyThreshold/MeV << " is assigned to " << regionName
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<< G4endl;
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}
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//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
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G4bool G4MicroElecCapture::IsApplicable(const G4ParticleDefinition&)
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{
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return true;
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}
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void G4MicroElecCapture::Initialise()
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{
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if (isInitialised) { return; }
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G4ProductionCutsTable* theCoupleTable = G4ProductionCutsTable::GetProductionCutsTable();
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G4int numOfCouples = (G4int)theCoupleTable->GetTableSize();
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G4cout << numOfCouples << G4endl;
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for (G4int i = 0; i < numOfCouples; ++i)
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{
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const G4Material* material = theCoupleTable->GetMaterialCutsCouple(i)->GetMaterial();
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G4cout << "G4Capture, Material " << i + 1 << " / "
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<< numOfCouples << " : " << material->GetName() << G4endl;
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if (material->GetName() == "Vacuum")
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{
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tableWF[material->GetName()] = 0;
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continue;
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}
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G4String mat = material->GetName();
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G4MicroElecMaterialStructure* str = new G4MicroElecMaterialStructure(mat);
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tableWF[mat] = str;
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}
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isInitialised = true;
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}
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//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
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G4VParticleChange* G4MicroElecCapture::PostStepDoIt(const G4Track& aTrack,
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const G4Step&)
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{
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if (!isInitialised) { Initialise(); }
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G4String mat = aTrack.GetMaterial()->GetName();
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G4int Ztarget = ((*(aTrack.GetMaterial()->GetElementVector()))[0])->GetZasInt();
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G4int Atarget = ((*(aTrack.GetMaterial()->GetElementVector()))[0])->GetAtomicMassAmu();
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G4double Nbelements = aTrack.GetMaterial()->GetNumberOfElements();
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G4double moleculeMass = aTrack.GetMaterial()->GetMassOfMolecule() / amu;
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auto FractionMass = aTrack.GetMaterial()->GetFractionVector();
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G4int Zinc = aTrack.GetParticleDefinition()->GetAtomicNumber();
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G4int Ainc = aTrack.GetParticleDefinition()->GetAtomicMass();
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G4String IncPartName = aTrack.GetParticleDefinition()->GetParticleName();
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G4double NIEdep = 0.0;
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for (G4int i = 0; i < Nbelements; ++i)
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{
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Ztarget = ((*(aTrack.GetMaterial()->GetElementVector()))[i])->GetZasInt();
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Atarget = ((*(aTrack.GetMaterial()->GetElementVector()))[i])->GetAtomicMassAmu();
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NIEdep = NIEdep + moleculeMass*FractionMass[i] / Atarget*G_Lindhard_Rob(aTrack.GetKineticEnergy(), Zinc, Ainc, Ztarget, Atarget);
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}
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WorkFunctionTable::iterator matWF;
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matWF = tableWF.find(mat);
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if (matWF == tableWF.end())
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{
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G4String str = "Material ";
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str += mat + " not found!";
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G4Exception("G4MicroElecCapture::PostStepGPIL", "em0002",
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FatalException, str);
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return nullptr;
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}
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else
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{
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G4MicroElecMaterialStructure* str = matWF->second;
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pParticleChange->Initialize(aTrack);
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pParticleChange->ProposeTrackStatus(fStopAndKill);
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G4double InitE = str->GetEnergyGap() + str->GetInitialEnergy();
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if (IncPartName == "e-")
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{
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// metals = Non ionizing deposited energy = 0.0
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if (((str->GetEnergyGap()) / eV)<(0.001))
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{
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pParticleChange->ProposeNonIonizingEnergyDeposit(0.0);
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pParticleChange->ProposeLocalEnergyDeposit(aTrack.GetKineticEnergy());
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}
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else // MicroElec materials Non ionizing deposited energy different from zero
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{
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G4int c = (G4int)((aTrack.GetKineticEnergy()) / (InitE));
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pParticleChange->ProposeNonIonizingEnergyDeposit(aTrack.GetKineticEnergy() - InitE*c);
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pParticleChange->ProposeLocalEnergyDeposit(aTrack.GetKineticEnergy());
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}
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}
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else
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{
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if ((IncPartName == "Genericion") || (IncPartName == "alpha")
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|| (IncPartName == "He3") || (IncPartName == "deuteron")
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|| (IncPartName == "triton") || (IncPartName == "proton"))
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{
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pParticleChange->ProposeNonIonizingEnergyDeposit(NIEdep);
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pParticleChange->ProposeLocalEnergyDeposit(aTrack.GetKineticEnergy());
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}
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else
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{
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pParticleChange->ProposeNonIonizingEnergyDeposit(0.0);
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pParticleChange->ProposeLocalEnergyDeposit(aTrack.GetKineticEnergy());
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}
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}
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} // matWF == tableWF.end())
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fParticleChange.SetProposedKineticEnergy(0.0);
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return pParticleChange;
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}
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//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
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G4double G4MicroElecCapture::GetMeanFreePath(const G4Track& aTrack, G4double,
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G4ForceCondition*)
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{
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G4String material = aTrack.GetMaterial()->GetName();
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// test particle type in order to applied the capture to both electrons, protons and heavy ions
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G4double mfp = DBL_MAX;
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G4double ekin = aTrack.GetKineticEnergy();
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if (ekin < 500*eV && aTrack.GetParticleDefinition()->GetParticleName() == "e-")
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{
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if (material != "G4_ALUMINUM_OXIDE" && material != "G4_SILICON_DIOXIDE"
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&& material != "G4_BORON_NITRIDE")
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{
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return DBL_MAX;
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}
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G4double S = 0;
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G4double y = 0;
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if (material == "G4_ALUMINUM_OXIDE")
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{
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S = 1 * (1 / nm);
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y = 0.25 * (1 / eV);
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}
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if (material == "G4_SILICON_DIOXIDE")
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{
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S = 0.3 * (1 / nm);
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y = 0.2 * (1 / eV);
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}
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if (material == "G4_BORON_NITRIDE")
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{
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S = 0 * (1 / nm);
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y = 1 * (1 / eV);
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}
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// VI: added numerical protection against extrime value of G4Exp argument
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y *= ekin;
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if (S > 0.0 && y < 100.0) { mfp = G4Exp(y) / S; }
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}
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return mfp;
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}
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//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
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G4double G4MicroElecCapture::G_Lindhard_Rob(G4double Trecoil, G4int Zrecoil, G4int Arecoil, G4int Zcible, G4int Acible)
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{
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G4double Lind =0.0;
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if (Arecoil <= 0 || Zrecoil == 0)
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{
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Lind = 0.0;
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}
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else
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{
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G4double El = 30.724 * Zcible * Zrecoil
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* std::pow((G4Pow::GetInstance()->Z23(Zcible) + G4Pow::GetInstance()->Z23(Zrecoil)), 0.5)
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* (Arecoil + Acible) / Acible;
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// multiplication by 1e6 to change El from eV to MeV
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G4double e = Trecoil / (El * CLHEP::eV);
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G4double Fl = (0.0793 * G4Pow::GetInstance()->Z23(Zrecoil) * std::pow(Zcible, 0.5) * std::pow((Arecoil + Acible), 1.5))
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/ (std::pow((G4Pow::GetInstance()->Z23(Zcible) + G4Pow::GetInstance()->Z23(Zrecoil)), 3. / 4.) * std::pow(Arecoil, 3. / 2.) * std::pow(Acible, 1. / 2.));
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Lind = 1. / (1 + Fl * (3.4008 * std::pow(e, 1. / 6.) + 0.40244 * std::pow(e, 3. / 4.) + e));
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// to get the energie that go into displacement
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Lind = Lind * Trecoil;
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}
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return Lind;
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}
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