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geant4/source/materials/include/G4MicroElecSiStructure.hh
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// G4MicroElecSiStructure.hh, 2011/08/29 A.Valentin, M. Raine
//
// Based on the following publications
//
// - Inelastic cross-sections of low energy electrons in silicon
// for the simulation of heavy ion tracks with theGeant4-DNA toolkit,
// NSS Conf. Record 2010, pp. 80-85
// - Geant4 physics processes for microdosimetry simulation:
// very low energy electromagnetic models for electrons in Si,
// NIM B, vol. 288, pp. 66-73, 2012.
// - Geant4 physics processes for microdosimetry simulation:
// very low energy electromagnetic models for protons and
// heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012.
#ifndef G4MICROELECSISTRUCTURE_HH
#define G4MICROELECSISTRUCTURE_HH 1
#include "globals.hh"
#include <vector>
class G4MicroElecSiStructure
{
public:
G4MicroElecSiStructure();
virtual ~G4MicroElecSiStructure() = default;
G4double Energy(G4int level);
G4int NumberOfLevels() { return nLevels; }
private:
G4int nLevels{6}; // Number of levels of silicon
std::vector<G4double> energyConstant;
};
#endif