Gabriele Cosmo
95 lines
4.2 KiB
Plaintext
95 lines
4.2 KiB
Plaintext
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-------------------------------------------------------------------
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=========================================================
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Geant4 - Microelec-SEY example
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=========================================================
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README file
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----------------------
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CORRESPONDING AUTHORS
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C. Inguimbert*, Q. Gibaru*, P. Caron*, M. Raine** D. Lambert**,
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* ONERA, 2 avenue Edouard Belin - BP 74025 - 31055 TOULOUSE, France
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** CEA, DAM, DIF, F-91297 Arpajon, France
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email: melanie.raine@cea.fr damien.lambert@cea.fr
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christophe.Inguimbert@onera.fr Quentin.Gibaru@onera.fr, Pablo.Caron@onera.fr
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---->0. INTRODUCTION.
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The Microelec-SEY example simulates the passage of incident electrons [10eV, 10keV]
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in a stack of 6 layers that thicknesses and materail nature can be user defined
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The number of electrons re-emitted by the irradiated surface is counted by a spherical detector
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surounding the whole geometry and providing the SEY rate in a csv file as a function of the incident energy
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---->1. GEOMETRY SET-UP.
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The geoemtry is made of a surface layer + 4 other layers + a substrate
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By default, the material is Si for all the layers, the World and the surrounding detector are made of vacuum
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The different layers are slabs. By default the substrate is a 1mm cube topped with 4 layers + the surface layers
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being slabs of same lateral dimensions and thicknesses of 100 nm.
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The ray of the spherical detector as well as the dimensions of the world are automatically defined
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---->2. SET-UP
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Make sure that the G4EMLOW database version is correct (> or = 7.16)
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The variable G4ANALYSIS_USE must be set to 1.
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The code should be compiled with cmake:
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$ mkdir Microelec-SEY-build
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$ cd Microelec-SEY-build
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$ cmake -DGeant4_DIR=/your_path/geant4-install/ $PATHTOMICROELECEXAMPLE/Microelec-SEY
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$ make
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It works in MT mode.
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---->3. HOW TO RUN THE EXAMPLE
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In interactive mode, run:
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./Microelec-SEY
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The macro Microelec-SEY.mac is executed by default.
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To get visualization, make sure to uncomment the #/control/execute vis.mac or #/control/execute vis-win.mac
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line in the macro.
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By default, the new MicroElec models are used.
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You can change the type of the target material in the macrocommand file
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(G4_Ag G4_Al G4_C G4_Cu G4_Ge G4_KAPTON G4_Ni G4_Si G4_SILICON_DIOXIDE G4_Ti G4_W),
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by selecting the materal the user want to test
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---->4. PHYSICS
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This example shows:
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- how to use the G4MicroElecPhysics processes,
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- how to affect them a name
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- how to combine them with Standard EM Physics.
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- and model the transport of electrons at low energy ([~eV, 10keV]
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A simple electron capture process is also provided in order to kill electrons
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below a chosen energy threshold, set in the Physics list.
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---->5. SIMULATION OUTPUT AND RESULT ANALYZIS
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The example is running by default for a set of incident energy defined in the .mac file and
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in the ###Energy Loop### setup section. The number of electron is defined in the
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loop_ekin.mac file (3000 electrons/incident energy by default)
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The output results consists in a SEY_nt_data.csv file, containing for the set of simulations
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- 1 column : the incident energy (in eV)
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- 2 column : Total emission yield (TEY without unit => number of counted electrons/incident number of electrons )
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- 3 column : Secondary emission yield (SEY without unit => number of counted secondary electrons/incident number of electrons )
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- 4 column : Backscattered emission yield (BEY without unit => number of counted incident electrons/incident number of electrons )
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- 5 column : Secondary emission yield of elecgtrons having an energy > 50 eV (SEY without unit => number of counted secondary electrons (E>50eV) /incident number of electrons )
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---------------------------------------------------------------------------
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Should you have any enquiry, please do not hesitate to contact one the corresponding authors.
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