// // ******************************************************************** // * License and Disclaimer * // * * // * The Geant4 software is copyright of the Copyright Holders of * // * the Geant4 Collaboration. It is provided under the terms and * // * conditions of the Geant4 Software License, included in the file * // * LICENSE and available at http://cern.ch/geant4/license . These * // * include a list of copyright holders. * // * * // * Neither the authors of this software system, nor their employing * // * institutes,nor the agencies providing financial support for this * // * work make any representation or warranty, express or implied, * // * regarding this software system or assume any liability for its * // * use. Please see the license in the file LICENSE and URL above * // * for the full disclaimer and the limitation of liability. * // * * // * This code implementation is the result of the scientific and * // * technical work of the GEANT4 collaboration. * // * By using, copying, modifying or distributing the software (or * // * any work based on the software) you agree to acknowledge its * // * use in resulting scientific publications, and indicate your * // * acceptance of all terms of the Geant4 Software license. * // ******************************************************************** // // // G4MicroElecInelasticModel_new.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a] // 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b] // Q. Gibaru is with CEA [a], ONERA [b] and CNES [c] // M. Raine and D. Lambert are with CEA [a] // // A part of this work has been funded by the French space agency(CNES[c]) // [a] CEA, DAM, DIF - 91297 ARPAJON, France // [b] ONERA - DPHY, 2 avenue E.Belin, 31055 Toulouse, France // [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France // // Based on the following publications // - A.Valentin, M. Raine, // Inelastic cross-sections of low energy electrons in silicon // for the simulation of heavy ion tracks with the Geant4-DNA toolkit, // NSS Conf. Record 2010, pp. 80-85 // https://doi.org/10.1109/NSSMIC.2010.5873720 // // - A.Valentin, M. Raine, M.Gaillardin, P.Paillet // Geant4 physics processes for microdosimetry simulation: // very low energy electromagnetic models for electrons in Silicon, // https://doi.org/10.1016/j.nimb.2012.06.007 // NIM B, vol. 288, pp. 66-73, 2012, part A // heavy ions in Si, NIM B, vol. 287, pp. 124-129, 2012, part B // https://doi.org/10.1016/j.nimb.2012.07.028 // // - M. Raine, M. Gaillardin, P. Paillet // Geant4 physics processes for silicon microdosimetry simulation: // Improvements and extension of the energy-range validity up to 10 GeV/nucleon // NIM B, vol. 325, pp. 97-100, 2014 // https://doi.org/10.1016/j.nimb.2014.01.014 // // - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine // Electron emission yield for low energy electrons: // Monte Carlo simulation and experimental comparison for Al, Ag, and Si // Journal of Applied Physics 121 (2017) 215107. // https://doi.org/10.1063/1.4984761 // // - P. Caron, // Study of Electron-Induced Single-Event Upset in Integrated Memory Devices // PHD, 16th October 2019 // // - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech, // Geant4 physics processes for microdosimetry and secondary electron emission simulation : // Extension of MicroElec to very low energies and new materials // NIM B, 2020, in review. // // //....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo...... #ifndef G4MICROELECINELASTICMODEL_NEW_HH #define G4MICROELECINELASTICMODEL_NEW_HH 1 #include "globals.hh" #include "G4VEmModel.hh" #include "G4ParticleChangeForGamma.hh" #include "G4ProductionCutsTable.hh" #include "G4MicroElecMaterialStructure.hh" #include "G4MicroElecCrossSectionDataSet_new.hh" #include "G4Electron.hh" #include "G4Proton.hh" #include "G4GenericIon.hh" #include "G4ParticleDefinition.hh" #include "G4LogLogInterpolation.hh" #include "G4VAtomDeexcitation.hh" #include "G4NistManager.hh" class G4MicroElecInelasticModel_new : public G4VEmModel { public: explicit G4MicroElecInelasticModel_new(const G4ParticleDefinition* p = nullptr, const G4String& nam = "MicroElecInelasticModel"); ~G4MicroElecInelasticModel_new() override; void Initialise(const G4ParticleDefinition*, const G4DataVector&) override; G4double CrossSectionPerVolume(const G4Material* material, const G4ParticleDefinition* p, G4double ekin, G4double emin, G4double emax) override; void SampleSecondaries(std::vector*, const G4MaterialCutsCouple*, const G4DynamicParticle*, G4double tmin, G4double maxEnergy) override; G4double DifferentialCrossSection(const G4ParticleDefinition * aParticleDefinition, G4double k, G4double energyTransfer, G4int shell); G4double ComputeRelativistVelocity(G4double E, G4double mass); G4double ComputeElasticQmax(G4double T1i, G4double T2i, G4double m1, G4double m2); G4double BKZ(G4double Ep, G4double mp, G4int Zp, G4double EF); // compute the effective charge according Brandt et Kitagawa theory G4double stepFunc(G4double x); G4double vrkreussler(G4double v, G4double vF); G4MicroElecInelasticModel_new & operator=(const G4MicroElecInelasticModel_new &right) = delete; G4MicroElecInelasticModel_new(const G4MicroElecInelasticModel_new&) = delete; private: // // private methods // G4int RandomSelect(G4double energy,const G4String& particle, G4double originalMass, G4int originalZ ); G4double RandomizeCreatedElectronEnergy(G4double secondaryKinetic); G4double RandomizeEjectedElectronEnergy(const G4ParticleDefinition * aParticleDefinition, G4double incomingParticleEnergy, G4int shell, G4double originalMass, G4int originalZ) ; G4double RandomizeEjectedElectronEnergyFromCumulatedDcs(const G4ParticleDefinition*, G4double k, G4int shell); G4double TransferedEnergy(const G4ParticleDefinition*, G4double k, G4int ionizationLevelIndex, G4double random); G4double Interpolate(G4double e1, G4double e2, G4double e, G4double xs1, G4double xs2); G4double QuadInterpolator( G4double e11, G4double e12, G4double e21, G4double e22, G4double x11, G4double x12, G4double x21, G4double x22, G4double t1, G4double t2, G4double t, G4double e); // // private elements // G4ParticleChangeForGamma* fParticleChangeForGamma = nullptr; //deexcitation manager to produce fluo photns and e- G4VAtomDeexcitation* fAtomDeexcitation = nullptr; G4Material* nistSi = nullptr; G4MicroElecMaterialStructure* currentMaterialStructure = nullptr; typedef std::map > MapFile; typedef std::map > MapData; typedef std::map > TriDimensionMap; typedef std::map > VecMap; //Tables for multilayers typedef std::map > TCSMap; TCSMap tableTCS; //TCS tables by particle typedef std::map* > dataDiffCSMap; dataDiffCSMap eDiffDatatable, pDiffDatatable; //Transfer probabilities (for slower code) dataDiffCSMap eNrjTransStorage, pNrjTransStorage; //Transfered energies and corresponding probability (faster code) typedef std::map* > dataProbaShellMap; dataProbaShellMap eProbaShellStorage, pProbaShellStorage; //Cumulated Transfer probabilities (faster code) typedef std::map* > incidentEnergyMap; incidentEnergyMap eIncidentEnergyStorage, pIncidentEnergyStorage; //Incident energies for interpolation (faster code) typedef std::map TranfEnergyMap; TranfEnergyMap eVecmStorage, pVecmStorage; //Transfered energy for interpolation (slower code) typedef std::map > MapStructure; MapStructure tableMaterialsStructures; //Structures of all materials simulated G4String currentMaterial = ""; std::map > lowEnergyLimit; std::map > highEnergyLimit; G4int verboseLevel; G4bool isInitialised ; G4bool fasterCode; G4bool SEFromFermiLevel; }; #endif