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This commit is contained in:
Gabriele Cosmo
2016-06-09 14:55:03 +02:00
parent 216a75eeb1
commit fe73f43734
6714 changed files with 118229 additions and 68144 deletions
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examples/advanced/microbeam/History
+16 -4
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@@ -1,5 +1,5 @@
-------------------------------------------------------------------
$Id: History,v 1.8 2006/06/24 19:29:12 sincerti Exp $
$Id: History,v 1.10 2006/11/23 12:24:20 sincerti Exp $
-------------------------------------------------------------------
=========================================================
@@ -9,6 +9,18 @@ $Id: History,v 1.8 2006/06/24 19:29:12 sincerti Exp $
Package History file
--------------------
24 Jun 2006 - S. Incerti, corrected for CLHEP 2.0.2.3 compatibility
06 Apr 2006 - S. Incerti, updated README file
04 Apr 2006 - MGP, package created
23 Nov 2006 - S. Incerti (microbeam-V08-01-01)
- Replaced G4MultipleScattering process for alphas by
G4hMultipleScattering process in src/MicrobeamPhysicsList.cc.
22 Nov 2006 - G. Cosmo (microbeam-V08-01-00)
- Removed obsolete vis-manager classes. Now using G4VisExecutive.
24 Jun 2006 - S. Incerti
- Corrected for CLHEP 2.0.2.3 compatibility.
06 Apr 2006 - S. Incerti
- Updated README file.
04 Apr 2006 - MGP
- Package created.
examples/advanced/microbeam/README
+11 -3
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@@ -1,5 +1,5 @@
-------------------------------------------------------------------
$Id: README,v 1.8 2006/06/23 10:53:39 sincerti Exp $
$Id: README,v 1.9 2006/11/23 12:24:20 sincerti Exp $
-------------------------------------------------------------------
=========================================================
@@ -26,6 +26,8 @@ CENBG, Bordeaux-Gradignan, France. For more information on this facility,
please visit :
http://www.cenbg.in2p3.fr/
An overall description of this example is also available in this directory:
to access it, simply open the microbeam.htm file with your internet browser.
---->1. GEOMETRY SET-UP.
@@ -74,9 +76,10 @@ cellular irradiation are 3 MeV alpha particles.
More details on the experimental setup and its simulation with Geant4 can
be found in the following papers :
- GEANT4 SIMULATION OF THE NEW CENBG MICRO AND NANO PROBES FACILITY
- GEANT4 SIMULATION OF THE NEW CENBG MICRO AND NANOPROBES FACILITY
By S. Incerti, C. Habchi, Ph. Moretto, J. Olivier and H. Seznec
To be published in NIMB, 2006
(CENBG, Gradignan),. May 2006. 5pp.
Published in Nucl.Instrum.Meth.B249:738-742, 2006
- DEVELOPMENT OF A FOCUSED CHARGED PARTICLE MICROBEAM FOR THE IRRADIATION OF
INDIVIDUAL CELLS.
@@ -91,6 +94,11 @@ C. Michelet-Habchi, Ph. Moretto, D.T. Nguyen, T. Pouthier, R.W. Smith
(CENBG, Gradignan),. Oct 2003. 6pp.
Published in IEEE Trans.Nucl.Sci.51:1395-1401, 2004
- SIMULATION OF ION PROPAGATION IN THE MICROBEAM LINE OF CENBG USING GEANT4.
S. Incerti, Ph. Barberet, B. Courtois, C. Michelet-Habchi, Ph. Moretto
(CENBG, Gradignan). Sep 2003.
Published in Nucl.Instrum.Meth.B210:92-97, 2003
---->3. SET-UP
examples/advanced/microbeam/include/MicrobeamVisManager.hh
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//
// ********************************************************************
// * License and Disclaimer *
// * *
// * The Geant4 software is copyright of the Copyright Holders of *
// * the Geant4 Collaboration. It is provided under the terms and *
// * conditions of the Geant4 Software License, included in the file *
// * LICENSE and available at http://cern.ch/geant4/license . These *
// * include a list of copyright holders. *
// * *
// * Neither the authors of this software system, nor their employing *
// * institutes,nor the agencies providing financial support for this *
// * work make any representation or warranty, express or implied, *
// * regarding this software system or assume any liability for its *
// * use. Please see the license in the file LICENSE and URL above *
// * for the full disclaimer and the limitation of liability. *
// * *
// * This code implementation is the result of the scientific and *
// * technical work of the GEANT4 collaboration. *
// * By using, copying, modifying or distributing the software (or *
// * any work based on the software) you agree to acknowledge its *
// * use in resulting scientific publications, and indicate your *
// * acceptance of all terms of the Geant4 Software license. *
// ********************************************************************
//
// -------------------------------------------------------------------
// $Id: MicrobeamVisManager.hh,v 1.5 2006/06/29 16:05:21 gunter Exp $
// -------------------------------------------------------------------
#ifndef MicrobeamVisManager_h
#define MicrobeamVisManager_h 1
#include "G4VisManager.hh"
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
class MicrobeamVisManager: public G4VisManager {
public:
MicrobeamVisManager ();
private:
void RegisterGraphicsSystems ();
};
#endif
examples/advanced/microbeam/microbeam.mac
+1 -1
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#/vis/viewer/zoom 2000000
#/vis/viewer/set/viewpointVector 400 0 105.79
/tracking/storeTrajectory 1
#/tracking/storeTrajectory 1
#/vis/scene/endOfEventAction accumulate
/tracking/verbose 0
examples/advanced/microbeam/microbeam.out
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*************************************************************
Geant4 version Name: global-V08-01-05 (15-December-2006)
Copyright : Geant4 Collaboration
Reference : NIM A 506 (2003), 250-303
WWW : http://cern.ch/geant4
*************************************************************
Visualization Manager instantiating...
Visualization Manager initialising...
Registering graphics systems...
You have successfully registered the following graphics systems.
Current available graphics systems are:
ASCIITree (ATree)
DAWNFILE (DAWNFILE)
GAGTree (GAGTree)
G4HepRep (HepRepXML)
G4HepRepFile (HepRepFile)
RayTracer (RayTracer)
VRML1FILE (VRML1FILE)
VRML2FILE (VRML2FILE)
Registering model factories...
You have successfully registered the following model factories.
Registered model factories:
generic
drawByCharge
drawByParticleID
drawByOriginVolume
drawByAttribute
Registered filter factories:
chargeFilter
particleFilter
originVolumeFilter
attributeFilter
***** Table : Nb of materials = 16 *****
Material: Vacuum density: 0.000 mg/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 204727576.737 pc
---> Element: Vacuum ( ) Z = 1.0 N = 1.0 A = 1.01 g/mole ElmMassFraction: 100.00 % ElmAbundance 100.00 %
Material: H2O density: 1.000 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 36.092 cm
---> Element: Hydrogen (H) Z = 1.0 N = 1.0 A = 1.01 g/mole ElmMassFraction: 11.21 % ElmAbundance 66.67 %
---> Element: Oxygen (O) Z = 8.0 N = 16.0 A = 16.00 g/mole ElmMassFraction: 88.79 % ElmAbundance 33.33 %
Material: Air density: 1.290 mg/cm3 temperature: 293.16 K pressure: 1.00 atm RadLength: 285.161 m
---> Element: Nitrogen (N) Z = 7.0 N = 14.0 A = 14.01 g/mole ElmMassFraction: 70.00 % ElmAbundance 72.71 %
---> Element: Oxygen (O) Z = 8.0 N = 16.0 A = 16.00 g/mole ElmMassFraction: 30.00 % ElmAbundance 27.29 %
Material: LPAir density: 0.000 mg/cm3 temperature: 293.16 K pressure: 1.00 atm RadLength: 56273252.573 km
---> Element: Nitrogen (N) Z = 7.0 N = 14.0 A = 14.01 g/mole ElmMassFraction: 71.50 % ElmAbundance 75.57 %
---> Element: Oxygen (O) Z = 8.0 N = 16.0 A = 16.00 g/mole ElmMassFraction: 25.00 % ElmAbundance 23.14 %
---> Element: Argon (Ar) Z = 18.0 N = 39.9 A = 39.95 g/mole ElmMassFraction: 3.50 % ElmAbundance 1.30 %
Material: Pl density: 21.400 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 3.058 mm
---> Element: Pl ( ) Z = 78.0 N = 195.1 A = 195.09 g/mole ElmMassFraction: 100.00 % ElmAbundance 100.00 %
Material: Butane density: 0.026 mg/cm3 temperature: 293.16 K pressure: 0.01 atm RadLength: 17.729 km
---> Element: Carbon (C) Z = 6.0 N = 12.0 A = 12.01 g/mole ElmMassFraction: 82.63 % ElmAbundance 28.57 %
---> Element: Hydrogen (H) Z = 1.0 N = 1.0 A = 1.01 g/mole ElmMassFraction: 17.37 % ElmAbundance 71.43 %
Material: Polyprop density: 900.000 mg/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 49.764 cm
---> Element: Carbon (C) Z = 6.0 N = 12.0 A = 12.01 g/mole ElmMassFraction: 85.60 % ElmAbundance 33.33 %
---> Element: Hydrogen (H) Z = 1.0 N = 1.0 A = 1.01 g/mole ElmMassFraction: 14.40 % ElmAbundance 66.67 %
Material: Si3N4 density: 3.440 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 7.644 cm
---> Element: Silicon (Si) Z = 14.0 N = 28.1 A = 28.09 g/mole ElmMassFraction: 60.06 % ElmAbundance 42.86 %
---> Element: Nitrogen (N) Z = 7.0 N = 14.0 A = 14.01 g/mole ElmMassFraction: 39.94 % ElmAbundance 57.14 %
Material: SiO2 density: 2.500 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 10.819 cm
---> Element: Silicon (Si) Z = 14.0 N = 28.1 A = 28.09 g/mole ElmMassFraction: 46.74 % ElmAbundance 33.33 %
---> Element: Oxygen (O) Z = 8.0 N = 16.0 A = 16.00 g/mole ElmMassFraction: 53.26 % ElmAbundance 66.67 %
Material: Laiton density: 8.500 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 1.487 cm
---> Element: Cuivre (Cu) Z = 29.0 N = 63.5 A = 63.55 g/mole ElmMassFraction: 49.28 % ElmAbundance 50.00 %
---> Element: Zinc (Zn) Z = 30.0 N = 65.4 A = 65.41 g/mole ElmMassFraction: 50.72 % ElmAbundance 50.00 %
Material: Cytoplasm1 density: 1.000 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 48.413 cm
---> Element: Hydrogen (H) Z = 1.0 N = 1.0 A = 1.01 g/mole ElmMassFraction: 59.60 % ElmAbundance 95.53 %
---> Element: Oxygen (O) Z = 8.0 N = 16.0 A = 16.00 g/mole ElmMassFraction: 24.24 % ElmAbundance 2.45 %
---> Element: Carbon (C) Z = 6.0 N = 12.0 A = 12.01 g/mole ElmMassFraction: 11.11 % ElmAbundance 1.50 %
---> Element: Nitrogen (N) Z = 7.0 N = 14.0 A = 14.01 g/mole ElmMassFraction: 4.04 % ElmAbundance 0.47 %
---> Element: Phosphorus (P) Z = 15.0 N = 31.0 A = 30.97 g/mole ElmMassFraction: 1.01 % ElmAbundance 0.05 %
Material: Cytoplasm2 density: 10.000 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 3.619 cm
---> Element: Hydrogen (H) Z = 1.0 N = 1.0 A = 1.01 g/mole ElmMassFraction: 10.64 % ElmAbundance 64.80 %
---> Element: Oxygen (O) Z = 8.0 N = 16.0 A = 16.00 g/mole ElmMassFraction: 74.50 % ElmAbundance 28.64 %
---> Element: Carbon (C) Z = 6.0 N = 12.0 A = 12.01 g/mole ElmMassFraction: 9.04 % ElmAbundance 4.63 %
---> Element: Nitrogen (N) Z = 7.0 N = 14.0 A = 14.01 g/mole ElmMassFraction: 3.21 % ElmAbundance 1.41 %
---> Element: Phosphorus (P) Z = 15.0 N = 31.0 A = 30.97 g/mole ElmMassFraction: 2.61 % ElmAbundance 0.52 %
Material: Cytoplasm3 density: 1.000 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 48.413 cm
---> Element: Hydrogen (H) Z = 1.0 N = 1.0 A = 1.01 g/mole ElmMassFraction: 59.60 % ElmAbundance 95.53 %
---> Element: Oxygen (O) Z = 8.0 N = 16.0 A = 16.00 g/mole ElmMassFraction: 24.24 % ElmAbundance 2.45 %
---> Element: Carbon (C) Z = 6.0 N = 12.0 A = 12.01 g/mole ElmMassFraction: 11.11 % ElmAbundance 1.50 %
---> Element: Nitrogen (N) Z = 7.0 N = 14.0 A = 14.01 g/mole ElmMassFraction: 4.04 % ElmAbundance 0.47 %
---> Element: Phosphorus (P) Z = 15.0 N = 31.0 A = 30.97 g/mole ElmMassFraction: 1.01 % ElmAbundance 0.05 %
Material: Nucleus1 density: 1.000 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 36.185 cm
---> Element: Hydrogen (H) Z = 1.0 N = 1.0 A = 1.01 g/mole ElmMassFraction: 10.64 % ElmAbundance 64.80 %
---> Element: Oxygen (O) Z = 8.0 N = 16.0 A = 16.00 g/mole ElmMassFraction: 74.50 % ElmAbundance 28.64 %
---> Element: Carbon (C) Z = 6.0 N = 12.0 A = 12.01 g/mole ElmMassFraction: 9.04 % ElmAbundance 4.63 %
---> Element: Nitrogen (N) Z = 7.0 N = 14.0 A = 14.01 g/mole ElmMassFraction: 3.21 % ElmAbundance 1.41 %
---> Element: Phosphorus (P) Z = 15.0 N = 31.0 A = 30.97 g/mole ElmMassFraction: 2.61 % ElmAbundance 0.52 %
Material: Nucleus2 density: 1.100 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 32.896 cm
---> Element: Hydrogen (H) Z = 1.0 N = 1.0 A = 1.01 g/mole ElmMassFraction: 10.64 % ElmAbundance 64.80 %
---> Element: Oxygen (O) Z = 8.0 N = 16.0 A = 16.00 g/mole ElmMassFraction: 74.50 % ElmAbundance 28.64 %
---> Element: Carbon (C) Z = 6.0 N = 12.0 A = 12.01 g/mole ElmMassFraction: 9.04 % ElmAbundance 4.63 %
---> Element: Nitrogen (N) Z = 7.0 N = 14.0 A = 14.01 g/mole ElmMassFraction: 3.21 % ElmAbundance 1.41 %
---> Element: Phosphorus (P) Z = 15.0 N = 31.0 A = 30.97 g/mole ElmMassFraction: 2.61 % ElmAbundance 0.52 %
Material: Nucleus3 density: 1.000 g/cm3 temperature: 273.15 K pressure: 1.00 atm RadLength: 36.185 cm
---> Element: Hydrogen (H) Z = 1.0 N = 1.0 A = 1.01 g/mole ElmMassFraction: 10.64 % ElmAbundance 64.80 %
---> Element: Oxygen (O) Z = 8.0 N = 16.0 A = 16.00 g/mole ElmMassFraction: 74.50 % ElmAbundance 28.64 %
---> Element: Carbon (C) Z = 6.0 N = 12.0 A = 12.01 g/mole ElmMassFraction: 9.04 % ElmAbundance 4.63 %
---> Element: Nitrogen (N) Z = 7.0 N = 14.0 A = 14.01 g/mole ElmMassFraction: 3.21 % ElmAbundance 1.41 %
---> Element: Phosphorus (P) Z = 15.0 N = 31.0 A = 30.97 g/mole ElmMassFraction: 2.61 % ElmAbundance 0.52 %
==========> The phantom contains 53480 voxels
Thank you for using G4BinaryCascade.
MicrobeamPhysicsList::SetCuts:CutLength : 10 nm
msc: Model variant of multiple scattering for e-
Lambda tables from 100 eV to 100 TeV in 120 bins.
Boundary/stepping algorithm is active with facrange= 0.02 Step limitation 1
G4AugerData for Element no. 6 are loaded
G4AugerData for Element no. 7 are loaded
G4AugerData for Element no. 8 are loaded
G4AugerData for Element no. 14 are loaded
G4AugerData for Element no. 15 are loaded
G4AugerData for Element no. 18 are loaded
G4AugerData for Element no. 29 are loaded
G4AugerData for Element no. 30 are loaded
G4AugerData for Element no. 78 are loaded
AugerTransitionTable complete
IONI: Total cross sections from EEDL database.
Gamma energy sampled from a parametrised formula.
Implementation of the continuous dE/dx part.
At present it can be used for electrons in the energy range [250eV,100GeV].
The process must work with G4LowEnergyBremsstrahlung.
LowEnBrem: Total cross sections from EEDL database.
Gamma energy sampled from a parameterised formula.
Implementation of the continuous dE/dx part.
At present it can be used for electrons in the energy range [250eV,100GeV].
The process must work with G4LowEnergyIonisation.
eIoni: tables are built for e+
dE/dx and range tables from 100 eV to 100 TeV in 120 bins.
Lambda tables from threshold to 100 TeV in 120 bins.
Delta cross sections from Moller+Bhabha, good description from 1 KeV to 100 GeV.
Step function: finalRange(mm)= 1, dRoverRange= 0.2, integral: 1
eBrem: tables are built for e+
dE/dx and range tables from 100 eV to 100 TeV in 120 bins.
Lambda tables from threshold to 100 TeV in 120 bins.
Total cross sections from a parametrisation based on the EEDL data library.
Good description from 1 KeV to 100 GeV, log scale extrapolation above 100 GeV.
annihil: Sampling according eplus2gg model
tables are built for e+
Lambda tables from 100 eV to 100 TeV in 120 bins.
msc: Model variant of multiple scattering for proton
Lambda tables from 100 eV to 100 TeV in 120 bins.
Boundary/stepping algorithm is active with facrange= 0.2 Step limitation 0
hLowEIoni: Knock-on electron cross sections .
Good description above the mean excitation energy.
Delta ray energy sampled from differential Xsection.
PhysicsTables from 10 eV to 0.1 TeV in 360 bins.
Electronic stopping power model is ICRU_R49He
from 1 keV to 2.5 MeV .
Parametrisation model for antiprotons is ICRU_R49p
from 25 keV to 2 MeV .
Parametrization of the Barkas effect is switched on.
Nuclear stopping power model is ICRU_R49
msc: Model variant of multiple scattering for GenericIon
Boundary/stepping algorithm is active with facrange= 0.2 Step limitation 0
hLowEIoni: Knock-on electron cross sections .
Good description above the mean excitation energy.
Delta ray energy sampled from differential Xsection.
PhysicsTables from 10 eV to 0.1 TeV in 360 bins.
Electronic stopping power model is ICRU_R49p
from 1 keV to 2 MeV .
Parametrisation model for antiprotons is ICRU_R49He
from 25 keV to 2 MeV .
Parametrization of the Barkas effect is switched on.
Nuclear stopping power model is ICRU_R49
msc: Model variant of multiple scattering for pi-
Lambda tables from 100 eV to 100 TeV in 120 bins.
Boundary/stepping algorithm is active with facrange= 0.2 Step limitation 0
========= Table of registered couples ==============================
Index : 0 used in the geometry : Yes recalculation needed : No
Material : Vacuum
Range cuts : gamma 10 nm e- 10 nm e+ 10 nm
Energy thresholds : gamma 990 eV e- 990 eV e+ 990 eV
Region(s) which use this couple :
DefaultRegionForTheWorld
Index : 1 used in the geometry : Yes recalculation needed : No
Material : Pl
Range cuts : gamma 10 nm e- 10 nm e+ 10 nm
Energy thresholds : gamma 990 eV e- 990 eV e+ 990 eV
Region(s) which use this couple :
DefaultRegionForTheWorld
Index : 2 used in the geometry : Yes recalculation needed : No
Material : Butane
Range cuts : gamma 10 nm e- 10 nm e+ 10 nm
Energy thresholds : gamma 990 eV e- 990 eV e+ 990 eV
Region(s) which use this couple :
DefaultRegionForTheWorld
Index : 3 used in the geometry : Yes recalculation needed : No
Material : Laiton
Range cuts : gamma 10 nm e- 10 nm e+ 10 nm
Energy thresholds : gamma 990 eV e- 990 eV e+ 990 eV
Region(s) which use this couple :
DefaultRegionForTheWorld
Index : 4 used in the geometry : Yes recalculation needed : No
Material : Si3N4
Range cuts : gamma 10 nm e- 10 nm e+ 10 nm
Energy thresholds : gamma 990 eV e- 990 eV e+ 990 eV
Region(s) which use this couple :
DefaultRegionForTheWorld
Index : 5 used in the geometry : Yes recalculation needed : No
Material : Air
Range cuts : gamma 10 nm e- 10 nm e+ 10 nm
Energy thresholds : gamma 990 eV e- 990 eV e+ 990 eV
Region(s) which use this couple :
DefaultRegionForTheWorld
Index : 6 used in the geometry : Yes recalculation needed : No
Material : Polyprop
Range cuts : gamma 10 nm e- 10 nm e+ 10 nm
Energy thresholds : gamma 990 eV e- 990 eV e+ 990 eV
Region(s) which use this couple :
DefaultRegionForTheWorld
Index : 7 used in the geometry : Yes recalculation needed : No
Material : H2O
Range cuts : gamma 10 nm e- 10 nm e+ 10 nm
Energy thresholds : gamma 990 eV e- 990 eV e+ 990 eV
Region(s) which use this couple :
DefaultRegionForTheWorld
Index : 8 used in the geometry : Yes recalculation needed : No
Material : Cytoplasm1
Range cuts : gamma 10 nm e- 10 nm e+ 10 nm
Energy thresholds : gamma 990 eV e- 990 eV e+ 990 eV
Region(s) which use this couple :
DefaultRegionForTheWorld
Index : 9 used in the geometry : Yes recalculation needed : No
Material : Nucleus1
Range cuts : gamma 10 nm e- 10 nm e+ 10 nm
Energy thresholds : gamma 990 eV e- 990 eV e+ 990 eV
Region(s) which use this couple :
DefaultRegionForTheWorld
Index : 10 used in the geometry : Yes recalculation needed : No
Material : Nucleus2
Range cuts : gamma 10 nm e- 10 nm e+ 10 nm
Energy thresholds : gamma 990 eV e- 990 eV e+ 990 eV
Region(s) which use this couple :
DefaultRegionForTheWorld
Index : 11 used in the geometry : Yes recalculation needed : No
Material : Cytoplasm2
Range cuts : gamma 10 nm e- 10 nm e+ 10 nm
Energy thresholds : gamma 990 eV e- 990 eV e+ 990 eV
Region(s) which use this couple :
DefaultRegionForTheWorld
Index : 12 used in the geometry : Yes recalculation needed : No
Material : SiO2
Range cuts : gamma 10 nm e- 10 nm e+ 10 nm
Energy thresholds : gamma 990 eV e- 990 eV e+ 990 eV
Region(s) which use this couple :
DefaultRegionForTheWorld
====================================================================
-> Event # 1 generated
===> The incident alpha particle has reached the targeted cell :
-----> total absorbed dose within Nucleus is (Gy) = 0.38476
-----> total absorbed dose within Cytoplasm is (Gy) = 0.0474129
-> Event # 2 generated
===> Sorry, the incident alpha particle has missed the targeted cell !
-> Event # 3 generated
===> The incident alpha particle has reached the targeted cell :
-----> total absorbed dose within Nucleus is (Gy) = 0.629625
-----> total absorbed dose within Cytoplasm is (Gy) = 0.0207051
-> Event # 4 generated
===> The incident alpha particle has reached the targeted cell :
-----> total absorbed dose within Nucleus is (Gy) = 0.642498
-----> total absorbed dose within Cytoplasm is (Gy) = 0.00610788
-> Event # 5 generated
===> The incident alpha particle has reached the targeted cell :
-----> total absorbed dose within Nucleus is (Gy) = 0.628085
-----> total absorbed dose within Cytoplasm is (Gy) = 0.00760408
-> Event # 6 generated
===> Sorry, the incident alpha particle has missed the targeted cell !
-> Event # 7 generated
===> The incident alpha particle has reached the targeted cell :
-----> total absorbed dose within Nucleus is (Gy) = 0.321989
-----> total absorbed dose within Cytoplasm is (Gy) = 0.0549673
-> Event # 8 generated
===> Sorry, the incident alpha particle has missed the targeted cell !
-> Event # 9 generated
===> Sorry, the incident alpha particle has missed the targeted cell !
-> Event # 10 generated
===> The incident alpha particle has reached the targeted cell :
-----> total absorbed dose within Nucleus is (Gy) = 0.543119
-----> total absorbed dose within Cytoplasm is (Gy) = 0.0475622
ERROR: G4VisCommandsViewerUpdate::SetNewValue: no current viewer.
-> Total number of particles detected by the gas detector : 6
Graphics systems deleted.
Visualization Manager deleting...
examples/advanced/microbeam/src/MicrobeamPhysicsList.cc
+4 -2
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@@ -24,7 +24,7 @@
// ********************************************************************
//
// -------------------------------------------------------------------
// $Id: MicrobeamPhysicsList.cc,v 1.5 2006/06/29 16:05:33 gunter Exp $
// $Id: MicrobeamPhysicsList.cc,v 1.6 2006/11/23 12:24:20 sincerti Exp $
// -------------------------------------------------------------------
#include "G4ParticleDefinition.hh"
@@ -124,6 +124,7 @@ void MicrobeamPhysicsList::ConstructProcess()
#include "G4LowEnergyBremsstrahlung.hh"
#include "G4hLowEnergyIonisation.hh"
#include "G4hMultipleScattering.hh"
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
@@ -189,7 +190,8 @@ void MicrobeamPhysicsList::ConstructEM()
(particle->GetPDGCharge() != 0.0) &&
(particle->GetParticleName() != "chargedgeantino")) {
pmanager->AddProcess(new G4MultipleScattering(),-1,1,1);
//pmanager->AddProcess(new G4MultipleScattering(),-1,1,1);
pmanager->AddProcess(new G4hMultipleScattering(),-1,1,1);
G4hLowEnergyIonisation* hLowEnergyIonisation = new G4hLowEnergyIonisation();
pmanager->AddProcess(hLowEnergyIonisation,-1,2,2);
examples/advanced/microbeam/src/MicrobeamVisManager.cc
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@@ -1,153 +0,0 @@
//
// ********************************************************************
// * License and Disclaimer *
// * *
// * The Geant4 software is copyright of the Copyright Holders of *
// * the Geant4 Collaboration. It is provided under the terms and *
// * conditions of the Geant4 Software License, included in the file *
// * LICENSE and available at http://cern.ch/geant4/license . These *
// * include a list of copyright holders. *
// * *
// * Neither the authors of this software system, nor their employing *
// * institutes,nor the agencies providing financial support for this *
// * work make any representation or warranty, express or implied, *
// * regarding this software system or assume any liability for its *
// * use. Please see the license in the file LICENSE and URL above *
// * for the full disclaimer and the limitation of liability. *
// * *
// * This code implementation is the result of the scientific and *
// * technical work of the GEANT4 collaboration. *
// * By using, copying, modifying or distributing the software (or *
// * any work based on the software) you agree to acknowledge its *
// * use in resulting scientific publications, and indicate your *
// * acceptance of all terms of the Geant4 Software license. *
// ********************************************************************
//
// -------------------------------------------------------------------
// $Id: MicrobeamVisManager.cc,v 1.5 2006/06/29 16:05:45 gunter Exp $
// -------------------------------------------------------------------
#ifdef G4VIS_USE
#include "MicrobeamVisManager.hh"
// Supported drivers...
#ifdef G4VIS_USE_DAWN
#include "G4FukuiRenderer.hh"
#endif
#ifdef G4VIS_USE_DAWNFILE
#include "G4DAWNFILE.hh"
#endif
#ifdef G4VIS_USE_OPENGLX
#include "G4OpenGLImmediateX.hh"
#include "G4OpenGLStoredX.hh"
#endif
#ifdef G4VIS_USE_OPENGLWIN32
#include "G4OpenGLImmediateWin32.hh"
#include "G4OpenGLStoredWin32.hh"
#endif
#ifdef G4VIS_USE_OPENGLXM
#include "G4OpenGLImmediateXm.hh"
#include "G4OpenGLStoredXm.hh"
#endif
#ifdef G4VIS_USE_OPACS
#include "G4Wo.hh"
#include "G4Xo.hh"
#endif
#ifdef G4VIS_USE_OIX
#include "G4OpenInventorX.hh"
#endif
#ifdef G4VIS_USE_OIWIN32
#include "G4OpenInventorWin32.hh"
#endif
#ifdef G4VIS_USE_VRML
#include "G4VRML1.hh"
#include "G4VRML2.hh"
#endif
#ifdef G4VIS_USE_VRMLFILE
#include "G4VRML1File.hh"
#include "G4VRML2File.hh"
#endif
#ifdef G4VIS_USE_RAYTRACER
#include "G4RayTracer.hh"
#endif
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
MicrobeamVisManager::MicrobeamVisManager () {}
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
void MicrobeamVisManager::RegisterGraphicsSystems () {
#ifdef G4VIS_USE_DAWN
RegisterGraphicsSystem (new G4FukuiRenderer);
#endif
#ifdef G4VIS_USE_DAWNFILE
RegisterGraphicsSystem (new G4DAWNFILE);
#endif
#ifdef G4VIS_USE_OPENGLX
RegisterGraphicsSystem (new G4OpenGLImmediateX);
RegisterGraphicsSystem (new G4OpenGLStoredX);
#endif
#ifdef G4VIS_USE_OPENGLWIN32
RegisterGraphicsSystem (new G4OpenGLImmediateWin32);
RegisterGraphicsSystem (new G4OpenGLStoredWin32);
#endif
#ifdef G4VIS_USE_OPENGLXM
RegisterGraphicsSystem (new G4OpenGLImmediateXm);
RegisterGraphicsSystem (new G4OpenGLStoredXm);
#endif
#ifdef G4VIS_USE_OPACS
RegisterGraphicsSystem (new G4Wo);
RegisterGraphicsSystem (new G4Xo);
#endif
#ifdef G4VIS_USE_OIX
RegisterGraphicsSystem (new G4OpenInventorX);
#endif
#ifdef G4VIS_USE_OIWIN32
RegisterGraphicsSystem (new G4OpenInventorWin32);
#endif
#ifdef G4VIS_USE_VRML
RegisterGraphicsSystem (new G4VRML1);
RegisterGraphicsSystem (new G4VRML2);
#endif
#ifdef G4VIS_USE_VRMLFILE
RegisterGraphicsSystem (new G4VRML1File);
RegisterGraphicsSystem (new G4VRML2File);
#endif
#ifdef G4VIS_USE_RAYTRACER
RegisterGraphicsSystem (new G4RayTracer);
#endif
if (fVerbose > 0) {
G4cout <<
"\nYou have successfully chosen to use the following graphics systems."
<< G4endl;
PrintAvailableGraphicsSystems ();
}
}
#endif