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This commit is contained in:
Gabriele Cosmo
2023-12-08 10:43:34 +01:00
parent dd1f179cda
commit 860a2b92bf
3962 changed files with 139318 additions and 164259 deletions
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source/processes/electromagnetic/lowenergy/include/G4LivermorePhotoElectricModel.hh
+26 -26
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@@ -55,22 +55,25 @@ public:
void Initialise(const G4ParticleDefinition*, const G4DataVector&) override;
G4double CrossSectionPerVolume(const G4Material*, const G4ParticleDefinition*, G4double energy,
G4double cutEnergy = 0.0, G4double maxEnergy = DBL_MAX) override;
G4double CrossSectionPerVolume(const G4Material*, const G4ParticleDefinition*,
G4double energy, G4double cutEnergy = 0.0,
G4double maxEnergy = DBL_MAX) override;
G4double ComputeCrossSectionPerAtom(const G4ParticleDefinition*, G4double energy, G4double Z,
G4double A = 0, G4double cut = 0,
G4double ComputeCrossSectionPerAtom(const G4ParticleDefinition*, G4double energy,
G4double Z, G4double A = 0, G4double cut = 0,
G4double emax = DBL_MAX) override;
void SampleSecondaries(std::vector<G4DynamicParticle*>*, const G4MaterialCutsCouple*,
const G4DynamicParticle*, G4double tmin, G4double maxEnergy) override;
void SampleSecondaries(std::vector<G4DynamicParticle*>*,
const G4MaterialCutsCouple*, const G4DynamicParticle*,
G4double tmin, G4double maxEnergy) override;
void InitialiseForElement(const G4ParticleDefinition*, G4int Z) override;
[[maybe_unused]] inline void SetLimitNumberOfShells(G4int);
[[maybe_unused]] inline void SetLimitNumberOfShells(G4int n) { nShellLimit = n; };
G4double GetBindingEnergy(G4int Z, G4int shell);
G4LivermorePhotoElectricModel& operator=(const G4LivermorePhotoElectricModel& right) = delete;
G4LivermorePhotoElectricModel& operator=
(const G4LivermorePhotoElectricModel& right) = delete;
G4LivermorePhotoElectricModel(const G4LivermorePhotoElectricModel&) = delete;
protected:
@@ -78,38 +81,35 @@ protected:
private:
void ReadData(const G4int Z);
const G4String& FindDirectoryPath();
void InitialiseOnFly(G4int Z);
const G4ParticleDefinition* theGamma;
const G4ParticleDefinition* theElectron;
G4VAtomDeexcitation* fAtomDeexcitation{nullptr};
static G4PhysicsFreeVector* fCrossSection[101]; // 101 because Z range is 1-100
static G4PhysicsFreeVector* fCrossSectionLE[101];
static std::vector<G4double>* fParamHigh[101];
static std::vector<G4double>* fParamLow[101];
static G4int fNShells[101];
static G4int fNShellsUsed[101];
static G4ElementData* fShellCrossSection;
static constexpr G4int ZMAXPE{101}; // 101 because Z range is 1-100
static G4ElementData* fCrossSection;
static G4ElementData* fCrossSectionLE;
static std::vector<G4double>* fParamHigh[ZMAXPE];
static std::vector<G4double>* fParamLow[ZMAXPE];
static G4int fNShells[ZMAXPE];
static G4int fNShellsUsed[ZMAXPE];
static G4Material* fWater;
static G4double fWaterEnergyLimit;
static G4String fDataDirectory;
G4VAtomDeexcitation* fAtomDeexcitation = nullptr;
std::vector<G4double> fSandiaCof;
G4double fCurrSection = 0.0;
G4double fCurrSection{0.0};
G4int verboseLevel;
G4int maxZ = 100;
G4int nShellLimit = 100;
G4bool fDeexcitationActive = false;
G4bool isInitialised = false;
G4int nShellLimit{100};
G4bool fDeexcitationActive{false};
G4bool isInitializer{false};
};
[[maybe_unused]] inline void G4LivermorePhotoElectricModel::SetLimitNumberOfShells(G4int n)
{
nShellLimit = n;
}
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo....
#endif
source/processes/electromagnetic/lowenergy/include/G4MicroElecCapture.hh
+110
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@@ -0,0 +1,110 @@
//
// ********************************************************************
// * License and Disclaimer *
// * *
// * The Geant4 software is copyright of the Copyright Holders of *
// * the Geant4 Collaboration. It is provided under the terms and *
// * conditions of the Geant4 Software License, included in the file *
// * LICENSE and available at http://cern.ch/geant4/license . These *
// * include a list of copyright holders. *
// * *
// * Neither the authors of this software system, nor their employing *
// * institutes,nor the agencies providing financial support for this *
// * work make any representation or warranty, express or implied, *
// * regarding this software system or assume any liability for its *
// * use. Please see the license in the file LICENSE and URL above *
// * for the full disclaimer and the limitation of liability. *
// * *
// * This code implementation is the result of the scientific and *
// * technical work of the GEANT4 collaboration. *
// * By using, copying, modifying or distributing the software (or *
// * any work based on the software) you agree to acknowledge its *
// * use in resulting scientific publications, and indicate your *
// * acceptance of all terms of the Geant4 Software license. *
// ********************************************************************
//
// $Id: G4ElectronCapture.hh,v 1.1 2010-08-31 11:23:58 vnivanch Exp $
// GEANT4 tag $Name: not supported by cvs2svn $
//
//---------------------------------------------------------------------------
//
// ClassName: G4MicroElecCapture
//
// Description: The process to kill e- to save CPU
//
// Author: V.Ivanchenko 31 August 2010 modified and adapted to MicorElec by C. Inguimbert 321/01/2022
//
//----------------------------------------------------------------------------
//
// Class description:
//
// G4ElectronCapture allows to remove unwanted e- from simulation in
// order to improve CPU performance. There are two parameters:
//
// 1) low energy threshold for e- kinetic energy (default 0)
// 2) the name of G4Region where process is active
//
//
// If an electron track is killed then energy deposition is added to the step
//
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
#ifndef MicroElecCapture_h
#define MicroElecCapture_h 1
#include "G4VDiscreteProcess.hh"
#include "G4MicroElecMaterialStructure.hh"
#include "globals.hh"
#include "G4ProductionCutsTable.hh"
#include "G4ParticleChangeForGamma.hh"
class G4Region;
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
class G4MicroElecCapture : public G4VDiscreteProcess
{
public:
G4MicroElecCapture(const G4String& regName, G4double ekinlimit);
virtual ~G4MicroElecCapture();
void SetKinEnergyLimit(G4double);
void BuildPhysicsTable(const G4ParticleDefinition&) override;
G4bool IsApplicable(const G4ParticleDefinition&) override;
void Initialise();
G4VParticleChange* PostStepDoIt(const G4Track&, const G4Step&) override;
G4MicroElecCapture(const G4MicroElecCapture&) = delete;
G4MicroElecCapture& operator = (const G4MicroElecCapture &right) = delete;
protected:
G4double GetMeanFreePath(const G4Track&, G4double,G4ForceCondition*) override;
private:
G4double G_Lindhard_Rob(G4double , G4int , G4int , G4int , G4int );
typedef std::map<G4String, G4MicroElecMaterialStructure*, std::less<G4String> > WorkFunctionTable;
WorkFunctionTable tableWF; //Table of all materials simulated
G4bool isInitialised;
G4double kinEnergyThreshold;
G4String regionName;
G4Region* region;
G4ParticleChangeForGamma fParticleChange;
};
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
#endif
source/processes/electromagnetic/lowenergy/include/G4MicroElecElasticModel_new.hh
-1
View File
@@ -78,7 +78,6 @@
#include <map>
#include <CLHEP/Units/SystemOfUnits.h>
#include "G4MicroElecMaterialStructure.hh"
#include "G4MicroElecCrossSectionDataSet_new.hh"
#include "G4VEmModel.hh"
source/processes/electromagnetic/lowenergy/include/G4MicroElecInelasticModel_new.hh
+3 -3
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@@ -127,10 +127,9 @@ public:
G4MicroElecInelasticModel_new & operator=(const G4MicroElecInelasticModel_new &right) = delete;
G4MicroElecInelasticModel_new(const G4MicroElecInelasticModel_new&) = delete;
protected:
G4ParticleChangeForGamma* fParticleChangeForGamma = nullptr;
private:
//
@@ -145,7 +144,7 @@ private:
G4double originalMass, G4int originalZ) ;
G4double RandomizeEjectedElectronEnergyFromCumulatedDcs(const G4ParticleDefinition*,
G4double k, G4int shell);
G4double k, G4int shell);
G4double TransferedEnergy(const G4ParticleDefinition*, G4double k,
G4int ionizationLevelIndex, G4double random);
@@ -191,6 +190,7 @@ private:
G4bool isInitialised ;
G4bool fasterCode;
G4bool SEFromFermiLevel;
};
#endif
source/processes/electromagnetic/lowenergy/include/G4MicroElecLOPhononModel.hh
+40 -37
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@@ -25,9 +25,9 @@
//
//
// G4MicroElecLOPhononModel.hh,
// 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
// Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
// M. Raine and D. Lambert are with CEA [a]
// 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
// Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
// M. Raine and D. Lambert are with CEA [a]
//
// A part of this work has been funded by the French space agency(CNES[c])
// [a] CEA, DAM, DIF - 91297 ARPAJON, France
@@ -36,14 +36,12 @@
//
// Based on the following publications
//
// - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
// Geant4 physics processes for microdosimetry and secondary electron emission simulation :
// Extension of MicroElec to very low energies and new materials
// NIM B, 2020, in review.
// - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
// Geant4 physics processes for microdosimetry and secondary electron emission simulation :
// Extension of MicroElec to very low energies and new materials
// NIM B, 2020, in review.
//
//
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
////////////////////////////////////////////////////////////////////////
#ifndef G4MICROELECLOPHONONMODEL_HH
#define G4MICROELECLOPHONONMODEL_HH 1
@@ -58,35 +56,40 @@
class G4MicroElecLOPhononModel : public G4VEmModel
{
public:
explicit G4MicroElecLOPhononModel(const G4ParticleDefinition*p = nullptr,
const G4String& nam = "G4MicroElecLOPhononModel");
~G4MicroElecLOPhononModel() override;
void Initialise(const G4ParticleDefinition*, const G4DataVector&) override;
G4double CrossSectionPerVolume(const G4Material* material,
const G4ParticleDefinition* p,
G4double ekin,
G4double emin,
G4double emax) override;
public:
void SampleSecondaries(std::vector<G4DynamicParticle*>*,
const G4MaterialCutsCouple*,
const G4DynamicParticle*,
G4double tmin,
G4double maxEnergy) override;
explicit G4MicroElecLOPhononModel(const G4ParticleDefinition* p = nullptr,
const G4String& nam = "G4MicroElecLOPhononModel");
~G4MicroElecLOPhononModel() override = default;
G4MicroElecLOPhononModel & operator=(const G4MicroElecLOPhononModel &right) = delete;
G4MicroElecLOPhononModel(const G4MicroElecLOPhononModel&) = delete;
protected:
G4ParticleChangeForGamma* fParticleChangeForGamma;
private:
G4double phononEnergy = 0.;
G4bool Interband = false;
G4bool isInitialised = false;
G4bool absor = false;
void Initialise(const G4ParticleDefinition*, const G4DataVector&) override;
G4double CrossSectionPerVolume(const G4Material* material,
const G4ParticleDefinition* p,
G4double ekin,
G4double emin = 0.0,
G4double emax= DBL_MAX) override;
void SampleSecondaries(std::vector<G4DynamicParticle*>*,
const G4MaterialCutsCouple*,
const G4DynamicParticle*,
G4double tmin = 0.0,
G4double maxEnergy = DBL_MAX) override;
G4MicroElecLOPhononModel& operator=(const G4MicroElecLOPhononModel&) = delete;
G4MicroElecLOPhononModel(const G4MicroElecLOPhononModel&) = delete;
protected:
G4ParticleChangeForGamma* fParticleChangeForGamma;
private:
G4double phononEnergy = 0.;
G4bool Interband = false;
G4bool isInitialised = false;
G4bool absor = false;
G4double Eprim = 0;
G4double signe = -1;
};
#endif
source/processes/electromagnetic/lowenergy/include/G4MicroElecSurface.hh
+12 -3
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@@ -41,6 +41,10 @@
// Extension of MicroElec to very low energies and new materials
// NIM B, 2020, in review.
//
// Based on:
// -the class G4OpBoundaryProcess.cc for the surface crossing of
// optical photons.
//
//
//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
@@ -65,6 +69,8 @@
#include "G4Material.hh"
#include "G4LogicalBorderSurface.hh"
#include "G4LogicalSkinSurface.hh"
#include "G4OpticalPhoton.hh"
#include "G4Electron.hh"
#include "G4TransportationManager.hh"
// Class Description:
@@ -114,8 +120,11 @@ class G4MicroElecSurface : public G4VDiscreteProcess
G4MicroElecSurface(const G4MicroElecSurface &right) = delete;
G4MicroElecSurface& operator=(const G4MicroElecSurface &right) = delete;
private:
void Initialise();
private:
// Returns the incident angle of electron
G4double GetIncidentAngle();
G4ThreeVector Reflexion(const G4StepPoint* PostStepPoint);
@@ -123,6 +132,7 @@ private:
typedef std::map<G4String, G4double, std::less<G4String> > WorkFunctionTable;
WorkFunctionTable tableWF; //Table of all materials simulated
G4double theParticleMomentum;
G4ThreeVector oldMomentum, previousMomentum;
G4ThreeVector theGlobalNormal;
G4ThreeVector theFacetNormal;
@@ -130,7 +140,6 @@ private:
const G4Material* material2;
G4MicroElecSurfaceStatus theStatus;
G4double theParticleMomentum;
G4double kCarTolerance;
G4double ekint, thetat, thetaft, energyThreshold, crossingProbability;
G4bool flag_franchissement_surface, flag_reflexion,flag_normal, teleportToDo, teleportDone, isInitialised;