Import Geant4 11.2.0 source tree
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@@ -22,9 +22,10 @@
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// * use in resulting scientific publications, and indicate your *
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// * acceptance of all terms of the Geant4 Software license. *
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// ********************************************************************
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//
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//
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// G4MicroElecMaterialStructure.hh, 2011/08/29 A.Valentin, M. Raine are with CEA [a]
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// 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
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// 2020/05/20 P. Caron, C. Inguimbert are with ONERA [b]
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// Q. Gibaru is with CEA [a], ONERA [b] and CNES [c]
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// M. Raine and D. Lambert are with CEA [a]
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//
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@@ -34,7 +35,7 @@
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// [c] CNES, 18 av.E.Belin, 31401 Toulouse CEDEX, France
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//
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// Based on the following publications
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// - A.Valentin, M. Raine,
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// - A.Valentin, M. Raine,
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// Inelastic cross-sections of low energy electrons in silicon
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// for the simulation of heavy ion tracks with the Geant4-DNA toolkit,
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// NSS Conf. Record 2010, pp. 80-85
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@@ -49,40 +50,42 @@
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// https://doi.org/10.1016/j.nimb.2012.07.028
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//
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// - M. Raine, M. Gaillardin, P. Paillet
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// Geant4 physics processes for silicon microdosimetry simulation:
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// Geant4 physics processes for silicon microdosimetry simulation:
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// Improvements and extension of the energy-range validity up to 10 GeV/nucleon
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// NIM B, vol. 325, pp. 97-100, 2014
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// https://doi.org/10.1016/j.nimb.2014.01.014
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//
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// - J. Pierron, C. Inguimbert, M. Belhaj, T. Gineste, J. Puech, M. Raine
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// Electron emission yield for low energy electrons:
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// Electron emission yield for low energy electrons:
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// Monte Carlo simulation and experimental comparison for Al, Ag, and Si
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// Journal of Applied Physics 121 (2017) 215107.
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// Journal of Applied Physics 121 (2017) 215107.
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// https://doi.org/10.1063/1.4984761
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//
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// - P. Caron,
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// Study of Electron-Induced Single-Event Upset in Integrated Memory Devices
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// PHD, 16th October 2019
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//
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// - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
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// Geant4 physics processes for microdosimetry and secondary electron emission simulation :
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// - Q.Gibaru, C.Inguimbert, P.Caron, M.Raine, D.Lambert, J.Puech,
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// Geant4 physics processes for microdosimetry and secondary electron emission simulation :
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// Extension of MicroElec to very low energies and new materials
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// NIM B, 2020, in review.
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//
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//
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//....oooOO0OOooo........oooOO0OOooo........oooOO0OOooo........oooOO0OOooo......
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#ifndef G4MICROELECMATERIALSTRUCTURE_HH
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#define G4MICROELECMATERIALSTRUCTURE_HH 1
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#ifndef G4MICROELECMATERIALSTRUCTURE_HH
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#define G4MICROELECMATERIALSTRUCTURE_HH 1
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#include "globals.hh"
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#include "G4Material.hh"
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#include "globals.hh"
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#include <vector>
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class G4MicroElecMaterialStructure
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{
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public:
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public:
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G4MicroElecMaterialStructure(const G4String& matName = "");
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virtual ~G4MicroElecMaterialStructure() = default;
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void ReadMaterialFile();
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G4double Energy(G4int level);
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G4int NumberOfLevels() { return nLevels; }
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@@ -94,14 +97,15 @@ class G4MicroElecMaterialStructure
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G4double GetWorkFunction() { return workFunction; };
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G4String GetMaterialName() { return materialName; };
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G4double GetLimitEnergy(G4int level);
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G4double GetElasticModelLowLimit() { return limitElastic[0]; }
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G4double GetElasticModelHighLimit() { return limitElastic[1]; }
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G4double GetElasticModelLowLimit() {return flimitElastic[0];}
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G4double GetElasticModelHighLimit() { return flimitElastic[1]; }
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G4double GetInelasticModelLowLimit(G4int pdg);
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G4double GetInelasticModelHighLimit(G4int pdg);
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G4bool IsShellWeaklyBound(G4int level);
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private:
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G4int nLevels = 3; // Number of levels of material
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private:
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// private elements
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G4int nLevels = 3; // Number of levels of material
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G4bool isCompound = false;
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G4String materialName = "";
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std::vector<G4bool> isShellWeaklyBoundVector;
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@@ -113,8 +117,8 @@ class G4MicroElecMaterialStructure
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std::vector<G4double> compoundShellZ;
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G4double Z = 0.0;
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G4double energyGap = 0.0;
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G4double limitElastic[2] = {0, 0};
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G4double limitInelastic[4] = {0, 0, 0, 0};
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G4double flimitElastic[2] = { 0,0 };
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G4double flimitInelastic[4] = { 0,0,0,0 };
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};
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#endif
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#endif
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