Import Geant4 11.0.0.beta source tree
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@@ -23,96 +23,72 @@
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// * acceptance of all terms of the Geant4 Software license. *
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// ********************************************************************
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//
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////////////////////////////////////////////////////////////////////////////////
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// Class: G4AdjointPhotoElectricModel
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// Author: L. Desorgher
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// Organisation: SpaceIT GmbH
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//
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/////////////////////////////////////////////////////////////////////////////////
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// Module: G4AdjointPhotoElectricModel
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// Author: L. Desorgher
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// Organisation: SpaceIT GmbH
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// Contract: ESA contract 21435/08/NL/AT
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// Customer: ESA/ESTEC
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/////////////////////////////////////////////////////////////////////////////////
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//
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// CHANGE HISTORY
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// --------------
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// ChangeHistory:
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// -1 September 2007 creation by L. Desorgher
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//
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// -January 2009. L. Desorgher
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// Put a higher limit on the CS to avoid a high rate of Inverse Photo e- effect at low energy. The very high adjoint CS of the reverse
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// photo electric reaction produce a high rate of reverse photo electric reaction in the inner side of a shielding for eaxmple, the correction of this occurrence
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// by weight correction in the StepDoIt method is not statistically sufficient at small energy. The problem is partially solved by setting an higher CS limit
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// and compensating it by an extra weight correction factor. However when coupling it with other reverse processes the reverse photo-electric is still
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// the source of very occasional high weight that decrease the efficiency of the computation. A way to solve this problemn is still needed but is difficult
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// to find as it happens in rarea case but does give a weighrt that is outside the noemal distribution. (Very Tricky!)
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//
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// -October 2009 Correction of Element sampling. L. Desorgher
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//
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//-------------------------------------------------------------
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// Documentation:
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// Model for the adjoint photo electric process
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// Model for the adjoint photo electric process.
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// Put a higher limit on the CS to avoid a high rate of Inverse Photo e-effect
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// at low energy. The very high adjoint CS of the reverse photo electric
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// reaction produce a high rate of reverse photo electric reaction in the inner
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// side of a shielding for eaxmple, the correction of this occurrence by weight
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// correction in the StepDoIt method is not statistically sufficient at small
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// energy. The problem is partially solved by setting a higher CS limit and
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// compensating it by an extra weight correction factor. However when coupling
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// it with other reverse processes the reverse photo-electric is still the
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// source of very occasional high weights that decrease the efficiency of the
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// computation. A way to solve this problemn is still needed but is difficult
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// to find as it happens in rare cases but does give a weight that is outside
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// the normal distribution. (Very Tricky!)
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//
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////////////////////////////////////////////////////////////////////////////////
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#ifndef G4AdjointPhotoElectricModel_h
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#define G4AdjointPhotoElectricModel_h 1
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#include "globals.hh"
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#include "G4VEmAdjointModel.hh"
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#include "G4PEEffectFluoModel.hh"
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class G4AdjointPhotoElectricModel: public G4VEmAdjointModel
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class G4AdjointPhotoElectricModel : public G4VEmAdjointModel
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{
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public:
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public:
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G4AdjointPhotoElectricModel();
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~G4AdjointPhotoElectricModel();
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virtual void SampleSecondaries(const G4Track& aTrack,
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G4bool IsScatProjToProjCase,
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G4ParticleChange* fParticleChange);
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virtual G4double AdjointCrossSection(const G4MaterialCutsCouple* aCouple,
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G4double primEnergy,
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G4bool IsScatProjToProjCase);
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virtual G4double GetAdjointCrossSection(const G4MaterialCutsCouple* aCouple,
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G4double primEnergy,
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G4bool IsScatProjToProjCase);
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G4double AdjointCrossSectionPerAtom(const G4Element* anElement,G4double electronEnergy);
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inline void SetTheDirectPEEffectModel(G4PEEffectFluoModel* aModel){theDirectPEEffectModel = aModel;
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DefineDirectEMModel(aModel);}
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virtual void CorrectPostStepWeight(G4ParticleChange* fParticleChange,
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G4double old_weight,
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G4double adjointPrimKinEnergy,
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G4double projectileKinEnergy,
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G4bool IsScatProjToProjCase);
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private:
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G4double xsec[40];
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G4double totAdjointCS;
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G4double totBiasedAdjointCS;
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G4double factorCSBiasing;
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G4double pre_step_AdjointCS;
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G4double post_step_AdjointCS;
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G4double shell_prob[40][40];
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G4PEEffectFluoModel* theDirectPEEffectModel;
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size_t index_element;
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G4double current_eEnergy;
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private:
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void DefineCurrentMaterialAndElectronEnergy(const G4MaterialCutsCouple* aCouple,
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G4double eEnergy);
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~G4AdjointPhotoElectricModel() override;
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void SampleSecondaries(const G4Track& aTrack, G4bool isScatProjToProj,
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G4ParticleChange* fParticleChange) override;
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G4double AdjointCrossSection(const G4MaterialCutsCouple* aCouple,
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G4double primEnergy,
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G4bool isScatProjToProj) override;
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G4double AdjointCrossSectionPerAtom(const G4Element* anElement,
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G4double electronEnergy);
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G4AdjointPhotoElectricModel(G4AdjointPhotoElectricModel&) = delete;
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G4AdjointPhotoElectricModel& operator=(
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const G4AdjointPhotoElectricModel& right) = delete;
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protected:
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void CorrectPostStepWeight(G4ParticleChange* fParticleChange,
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G4double old_weight, G4double adjointPrimKinEnergy,
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G4double projectileKinEnergy,
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G4bool isScatProjToProj) override;
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private:
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void DefineCurrentMaterialAndElectronEnergy(
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const G4MaterialCutsCouple* aCouple, G4double eEnergy);
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G4double fShellProb[40][40];
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G4double fXsec[40];
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G4double fTotAdjointCS = 0.;
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G4double fFactorCSBiasing = 1.;
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G4double fPreStepAdjointCS = 0.;
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G4double fPostStepAdjointCS = 0.;
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G4double fCurrenteEnergy = 0.;
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size_t fIndexElement = 0;
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};
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#endif
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